Datasheet > NVMFS6H864N

NVMFS6H864N

更新时间： 2024-11-07 02:52:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	189K
描述
MOSFET - Power, Single N-Channel

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中文翻译

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数据手册

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NVMFS6H864N 数据手册

MOSFET - Power, Single

N-Channel

80 V, 32 mW, 23 A

NVMFS6H864N

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• NVMFS6H864NWF − Wettable Flank Option for Enhanced Optical

Inspection

80 V

32 mW @ 10 V

23 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

D (5,6)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

G (4)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

S (1,2,3)

N−CHANNEL MOSFET

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

= 100°C

MARKING

DIAGRAM

Continuous Drain

Current R

T = 25°C

6.7

4.8

3.5

1.7

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

XXXXXX = 6H864N

XXXXXX = (NVMFS6H864N) or

XXXXXX = 864NWF

+175

Source Current (Body Diode)

27.5

XXXXXX = (NVMFS6H864NWF)

Single Pulse Drain−to−Source Avalanche

= Assembly Location

= Year

Energy (I

= 1 A)

L(pk)

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

4.5

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

June, 2020 − Rev. 2

NVMFS6H864N/D

12 3 4 5 6 7

中文翻译

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与NVMFS6H864N相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H864NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS9D6P04M8LT1G	ONSEMI	获取价格	MOSFET - Power, Single P-Channel
NVMFSC0D9N04C	ONSEMI	获取价格	功率 MOSFET，40V，300A，0.92 mΩ，单 N 沟道，SO8-FL
NVMFSC0D9N04CL	ONSEMI	获取价格	Power MOSFET - DUAL COOL® N-Channel,DFN8 5x6
NVMFSC1D6N06CL	ONSEMI	获取价格	Power MOSFET, DUAL COOL® N-Channel 60 V, 1.5
NVMFSW6D1N08HT1G	ONSEMI	获取价格	Power MOSFET - 80 V, 5.5 mΩ, 89 A, Single N−C

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