Datasheet > NVMFS6H864NLT1G

NVMFS6H864NLT1G

更新时间： 2024-11-07 02:52:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	183K
描述
MOSFET - Power, Single N-Channel

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数据手册

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NVMFS6H864NLT1G 数据手册

MOSFET - Power, Single

N-Channel

80 V, 29 mW, 22 A

NVMFS6H864NL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• NVMFS6H864NLWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

29 mW @ 10 V

38 mW @ 4.5 V

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

80 V

22 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5,6)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

G (4)

(Notes 1, 3)

Steady

State

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

7.0

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.5

1.7

(Notes 1, 2)

T = 100°C

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

XXXXXX = 6H864L

XXXXXX = (NVMFS6H864NL) or

XXXXXX = 864LWF

Single Pulse Drain−to−Source Avalanche

Energy (I

= 1.0 A)

L(pk)

XXXXXX = (NVMFS6H864NLWF)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

4.6

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

March, 2020 − Rev. 0

NVMFS6H864NL/D

12 3 4 5 6 7

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与NVMFS6H864NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H864NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS9D6P04M8LT1G	ONSEMI	获取价格	MOSFET - Power, Single P-Channel
NVMFSC0D9N04C	ONSEMI	获取价格	功率 MOSFET，40V，300A，0.92 mΩ，单 N 沟道，SO8-FL
NVMFSC0D9N04CL	ONSEMI	获取价格	Power MOSFET - DUAL COOL® N-Channel,DFN8 5x6
NVMFSC1D6N06CL	ONSEMI	获取价格	Power MOSFET, DUAL COOL® N-Channel 60 V, 1.5
NVMFSW6D1N08HT1G	ONSEMI	获取价格	Power MOSFET - 80 V, 5.5 mΩ, 89 A, Single N−C
NVMFWD020N06CT1G	ONSEMI	获取价格	Power MOSFET Power, N-Channel, DUAL SO8FL, 60
NVMFWD024N06CT1G	ONSEMI	获取价格	Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 2

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