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NVMFS6H858NT1G

更新时间： 2024-11-07 11:14:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 386K
描述
Power MOSFET 80 V, 32 A, 20.7 mΩ, Single N-Channel, SO8-FL

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NVMFS6H858NT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
80 V  
20.7 mW @ 10 V  
32 A  
80 V, 20.7 mW, 32 A  
D (5,6)  
NVMFS6H858N  
Features  
G (4)  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
S (1,2,3)  
N−CHANNEL MOSFET  
• Low Q and Capacitance to Minimize Driver Losses  
G
• NVMFS6H858NWF − Wettable Flank Option for Enhanced Optical  
Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
DFNW5  
(FULL−CUT SO8FL WF)  
CASE 507BA  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
Steady  
State  
T
T
= 25°C  
I
D
29  
A
C
q
JC  
MARKING DIAGRAM  
= 100°C  
21  
(Notes 1, 3)  
C
D
Power Dissipation  
T
T
= 25°C  
P
42  
21  
W
A
C
D
R
(Note 1)  
q
JC  
S
S
S
G
D
D
= 100°C  
C
XXXXXX  
AYWZZ  
Continuous Drain  
Current R  
Steady T = 25°C  
I
D
8.4  
A
State  
q
JA  
T = 100°C  
A
6.0  
(Notes 1, 2, 3)  
D
Power Dissipation  
T = 25°C  
A
P
D
3.5  
1.8  
W
XXXXXX = 6H858N  
XXXXXX = (NVMFS6H858N) or  
XXXXXX = 858NWF  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
137  
A
A
p
XXXXXX = (NVMFS6H858NWF)  
Operating Junction and Storage Temperature  
Range  
T , T  
J
−55 to  
+175  
°C  
stg  
A
Y
= Assembly Location  
= Year  
Source Current (Body Diode)  
I
35  
A
W
ZZ  
= Work Week  
= Lot Traceability  
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
151  
mJ  
Energy (I  
= 3.5 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
3.5  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
42.5  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
April, 2022 − Rev. 3  
NVMFS6H858N/D  
 
12345678

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