Datasheet > NVMFS6H858NLT1G

NVMFS6H858NLT1G

更新时间： 2024-11-07 11:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	297K
描述
Power MOSFET 80V, 32A, 20.7 mOhm, Single N-Channel, SO8-FL.

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NVMFS6H858NLT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

19.5 mW @ 10 V

25 mW @ 4.5 V

80 V

30 A

80 V, 19.5 mW, 30 A

NVMFS6H858NL

D (5,6)

Features

 Small Footprint (5x6 mm) for Compact Design

G (4)

 Low R

to Minimize Conduction Losses

DS(on)

 Low Q and Capacitance to Minimize Driver Losses

 NVMFS6H858NLWF − Wettable Flank Option for Enhanced Optical

S (1,2,3)

N−CHANNEL MOSFET

Inspection

 AEC−Q101 Qualified and PPAP Capable

 These Devices are Pb−Free and are RoHS Compliant

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Gate−to−Source Voltage

20

Continuous Drain

Current R

= 25C

= 100C

= 25C

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

XXXXXX

AYWZZ

= 100C

Continuous Drain

Current R

T = 25C

8.7

6.1

3.5

1.8

142

DFNW5

(SO8FL)

CASE 507BA

T = 100C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25C

XXXXXX = 6H858L

(Notes 1, 2)

T = 100C

XXXXXX = (NVMFS6H858NL) or

XXXXXX = 858LWF

XXXXXX = (NVMFS6H858NLWF)

Pulsed Drain Current

T = 25C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

C

= Assembly Location

= Year

stg

= Work Week

= Lot Traceability

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

198

Energy (I

= 1.5 A)

L(pk)

Lead Temperature for Soldering Purposes

260

C

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

(1/8 from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

3.6

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

 Semiconductor Components Industries, LLC, 2019

Publication Order Number:

November, 2022 − Rev. 1

NVMFS6H858NL/D

12 3 4 5 6 7 8

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与NVMFS6H858NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H858NLWFT1G	ONSEMI	获取价格	Power MOSFET 80V, 32A, 20.7 mOhm, Single N-Channel, SO8-FL.
NVMFS6H858NT1G	ONSEMI	获取价格	Power MOSFET 80 V, 32 A, 20.7 mΩ, Single N-Ch
NVMFS6H858NWFT1G	ONSEMI	获取价格	Power MOSFET 80 V, 32 A, 20.7 mΩ, Single N-Ch
NVMFS6H864N	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS9D6P04M8LT1G	ONSEMI	获取价格	MOSFET - Power, Single P-Channel

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