Datasheet > NVMFS6H852NLT1G

NVMFS6H852NLT1G

更新时间： 2024-11-07 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	386K
描述
Power MOSFET 80 V, 42 A, 13.1 mΩ, Single N-Channel, SO8-FL

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NVMFS6H852NLT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

13.1 mW @ 10 V

17 mW @ 4.5 V

80 V

42 A

80 V, 13.1 mW, 42 A

D (5,6)

NVMFS6H852NL

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

G (4)

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• NVMFS6H852NLWF − Wettable Flank Option for Enhanced Optical

Inspection

S (1,2,3)

N−CHANNEL MOSFET

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

DFNW5

(FULL−CUT SO8FL WF)

CASE 507BA

Gate−to−Source Voltage

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

= 100°C

(Notes 1, 3)

Power Dissipation

MARKING DIAGRAM

(Note 1)

Continuous Drain

Current R

Steady T = 25°C

State

XXXXXX

AYWZZ

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

3.6

1.8

208

(Notes 1, 2)

T = 100°C

XXXXXX = 6H852L

XXXXXX = (NVMFS6H852NL) or

XXXXXX = 852LWF

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

XXXXXX = (NVMFS6H852NLWF)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

207

Energy (I

= 2.2 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.8

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2022 − Rev. 1

NVMFS6H852NL/D

12 3 4 5 6 7 8

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与NVMFS6H852NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H852NLWFT1G	ONSEMI	获取价格	Power MOSFET 80 V, 42 A, 13.1 mΩ, Single N-Ch
NVMFS6H852NT1G	ONSEMI	获取价格	功率 MOSFET，80V，43A，14.2mΩ，单 N 沟道，SO8-FL
NVMFS6H852NWFT1G	ONSEMI	获取价格	功率 MOSFET，80V，43A，14.2mΩ，单 N 沟道，SO8-FL
NVMFS6H858NLT1G	ONSEMI	获取价格	Power MOSFET 80V, 32A, 20.7 mOhm, Single N-Channel, SO8-FL.
NVMFS6H858NLWFT1G	ONSEMI	获取价格	Power MOSFET 80V, 32A, 20.7 mOhm, Single N-Channel, SO8-FL.
NVMFS6H858NT1G	ONSEMI	获取价格	Power MOSFET 80 V, 32 A, 20.7 mΩ, Single N-Ch
NVMFS6H858NWFT1G	ONSEMI	获取价格	Power MOSFET 80 V, 32 A, 20.7 mΩ, Single N-Ch
NVMFS6H864N	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H864NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel

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