Datasheet > NVMFS6H818NT1G

NVMFS6H818NT1G

更新时间： 2024-04-09 18:58:38

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	212K
描述
单 N 沟道，功率 MOSFET，80V，123A，3.7mΩ

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NVMFS6H818NT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel

80 V, 3.7 mW, 123 A

MAX

I MAX

(BR)DSS

DS(ON)

80 V

3.7 mꢂ @ 10 V

123 A

D (5,6)

NVMFS6H818N

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

N−CHANNEL MOSFET

• NVMFS6H818NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MARKING

DIAGRAMS

DFN5

CASE 506EZ

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

XXXXXX

AYWZZ

DSS

DFNW5

CASE 507BA

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

123

ꢀ

XXXXXX = Specific Device Code

= 100°C

(Notes 1, 3)

Steady

State

= Assembly Location

= Year

= Work Week

= Lot Traceability

Power Dissipation

= 25°C

136

(Note 1)

ꢀ

= 100°C

Continuous Drain

Current R

T = 25°C

ꢀ

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.8

1.9

900

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

(Notes 1 & 2)

ꢀ

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ꢁ s

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

Source Current (Body Diode)

113

731

Single Pulse Drain−to−Source Avalanche

Energy (I

= 9.3 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

1.1

°C/W

ꢀ

Junction−to−Ambient − Steady State (Note 2)

ꢀ

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2022 − Rev. 2

NVMFS6H818N/D

12 3 4 5 6 7

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