Datasheet > NVMFS6H824NLT1G

NVMFS6H824NLT1G

更新时间： 2024-09-16 02:52:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	185K
描述
MOSFET - Power, Single N-Channel

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NVMFS6H824NLT1G 数据手册

MOSFET - Power, Single

N-Channel

80 V, 4 mW, 110 A

NVMFS6H824NL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• NVMFS6H824NLWF − Wettable Flank Option for Enhanced Optical

Inspection

4 mW @ 10 V

80 V

110 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

5.2 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (5,6)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (4)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

110

(Notes 1, 3)

Steady

State

S (1,2,3)

N−CHANNEL MOSFET

Power Dissipation

116

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

MARKING

DIAGRAM

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.8

1.9

722

(Notes 1, 2)

T = 100°C

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

XXXXXX = 6H824L

XXXXXX = (NVMFS6H824NL) or

XXXXXX = 824LWF

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

1081

Energy (I

= 7.0 A)

L(pk)

XXXXXX = (NVMFS6H824NLWF)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

1.3

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

January, 2020 − Rev. 0

NVMFS6H824NL/D

12 3 4 5 6 7

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与NVMFS6H824NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H824NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H824NT1G	ONSEMI	获取价格	功率 MOSFET，80V，107A，4.5mΩ，单 N 沟道，SO8-FL
NVMFS6H824NWFT1G	ONSEMI	获取价格	功率 MOSFET，80V，107A，4.5mΩ，单 N 沟道，SO8-FL
NVMFS6H836N	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H836NLT1G	ONSEMI	获取价格	Power MOSFET 80 V, 77 A, 6.2 mΩ, Single N-Cha
NVMFS6H836NLWFT1G	ONSEMI	获取价格	Power MOSFET 80 V, 77 A, 6.2 mΩ, Single N-Cha
NVMFS6H836NT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H836NT3G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H836NWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H836NWFT3G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel

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