DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
6.2 mW @ 10 V
7.8 mW @ 4.5 V
80 V
77 A
80 V, 6.2 mW, 77 A
NVMFS6H836NL
D (5,6)
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G (4)
G
• NVMFS6H836NLWF − Wettable Flank Option for Enhanced Optical
Inspection
S (1,2,3)
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halide Free, and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
1
V
DSS
Gate−to−Source Voltage
V
20
V
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
DFNW5 5x6
(FULL−CUT
SO8FL WF)
CASE 507BA
GS
Continuous Drain
Current R
Steady
State
T
= 25°C
I
77
A
C
D
q
JC
T
C
= 100°C
55
(Notes 1, 3)
Power Dissipation
T
= 25°C
P
89
45
16
W
A
C
D
R
(Note 1)
q
JC
T
C
= 100°C
MARKING DIAGRAM
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
q
JA
T = 100°C
A
11
(Notes 1, 2, 3)
D
Power Dissipation
T = 25°C
P
3.7
1.8
449
W
S
S
S
G
D
D
A
D
R
(Notes 1, 2)
q
JA
XXXXXX
AYWZZ
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
+ 175
°C
J
stg
XXXXXX = 6H836L
XXXXXX = (NVMFS6H836NL) or
XXXXXX = 836LWF
Source Current (Body Diode)
I
74
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
653
mJ
Energy (I
= 4.6 A)
L(pk)
XXXXXX = (NVMFS6H836NLWF)
A
Y
= Assembly Location
= Year
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
1.7
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
40.7
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 1
NVMFS6H836NL/D
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