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NVMFS6H836NLWFT1G

更新时间： 2024-11-10 11:11:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 296K
描述
Power MOSFET 80 V, 77 A, 6.2 mΩ, Single N-Channel, SO8-FL

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NVMFS6H836NLWFT1G 数据手册

 浏览型号NVMFS6H836NLWFT1G的Datasheet PDF文件第2页浏览型号NVMFS6H836NLWFT1G的Datasheet PDF文件第3页浏览型号NVMFS6H836NLWFT1G的Datasheet PDF文件第4页浏览型号NVMFS6H836NLWFT1G的Datasheet PDF文件第5页浏览型号NVMFS6H836NLWFT1G的Datasheet PDF文件第6页浏览型号NVMFS6H836NLWFT1G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
6.2 mW @ 10 V  
7.8 mW @ 4.5 V  
80 V  
77 A  
80 V, 6.2 mW, 77 A  
NVMFS6H836NL  
D (5,6)  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G (4)  
G
• NVMFS6H836NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
S (1,2,3)  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halide Free, and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
1
V
DSS  
Gate−to−Source Voltage  
V
20  
V
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
DFNW5 5x6  
(FULL−CUT  
SO8FL WF)  
CASE 507BA  
GS  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
77  
A
C
D
q
JC  
T
C
= 100°C  
55  
(Notes 1, 3)  
Power Dissipation  
T
= 25°C  
P
89  
45  
16  
W
A
C
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
MARKING DIAGRAM  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
q
JA  
T = 100°C  
A
11  
(Notes 1, 2, 3)  
D
Power Dissipation  
T = 25°C  
P
3.7  
1.8  
449  
W
S
S
S
G
D
D
A
D
R
(Notes 1, 2)  
q
JA  
XXXXXX  
AYWZZ  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+ 175  
°C  
J
stg  
XXXXXX = 6H836L  
XXXXXX = (NVMFS6H836NL) or  
XXXXXX = 836LWF  
Source Current (Body Diode)  
I
74  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
653  
mJ  
Energy (I  
= 4.6 A)  
L(pk)  
XXXXXX = (NVMFS6H836NLWF)  
A
Y
= Assembly Location  
= Year  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Parameter  
Symbol  
Value  
1.7  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
40.7  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2022 − Rev. 1  
NVMFS6H836NL/D  
 
12345678

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