Datasheet > NVMFS6H836NT1G

NVMFS6H836NT1G

更新时间： 2024-11-10 02:51:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	187K
描述
MOSFET - Power, Single N-Channel

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中文翻译

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NVMFS6H836NT1G 数据手册

MOSFET - Power, Single

N-Channel

80 V, 6.7 mW, 80 A

NVMFS6H836N

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• NVMFS6H836NWF − Wettable Flank Option for Enhanced Optical

Inspection

80 V

6.7 mW @ 10 V

80 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

D (5,6)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

G (4)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

S (1,2,3)

N−CHANNEL MOSFET

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

= 100°C

MARKING

DIAGRAM

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.7

1.8

432

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

XXXXXX = 6H836N

XXXXXX = (NVMFS6H836N) or

XXXXXX = 836NWF

Source Current (Body Diode)

XXXXXX = (NVMFS6H836NWF)

Single Pulse Drain−to−Source Avalanche

521

Energy (I

= 4.6 A)

= Assembly Location

= Year

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

1.7

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

40.6

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2020 − Rev. 3

NVMFS6H836N/D

12 3 4 5 6 7

中文翻译

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与NVMFS6H836NT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H836NT3G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H836NWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H836NWFT3G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H848NLT1G	ONSEMI	获取价格	Power MOSFET 80 V, 59 A, 8.8 mΩ, Single N-Cha
NVMFS6H848NLWFT1G	ONSEMI	获取价格	Power MOSFET 80 V, 59 A, 8.8 mΩ, Single N-Cha
NVMFS6H848NT1G	ONSEMI	获取价格	Power MOSFET 80 V, 64 A, 9.4 mΩ, Single N-Cha
NVMFS6H848NWFT1G	ONSEMI	获取价格	Power MOSFET 80 V, 64 A, 9.4 mΩ, Single N-Cha
NVMFS6H852NLT1G	ONSEMI	获取价格	Power MOSFET 80 V, 42 A, 13.1 mΩ, Single N-Ch
NVMFS6H852NLWFT1G	ONSEMI	获取价格	Power MOSFET 80 V, 42 A, 13.1 mΩ, Single N-Ch
NVMFS6H852NT1G	ONSEMI	获取价格	功率 MOSFET，80V，43A，14.2mΩ，单 N 沟道，SO8-FL

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