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NVMFS6H824NWFT1G

更新时间： 2024-11-06 11:14:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 297K
描述
功率 MOSFET，80V，107A，4.5mΩ，单 N 沟道，SO8-FL

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NVMFS6H824NWFT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
80 V  
4.5 mW @ 10 V  
107 A  
80 V, 4.5 mW, 107 A  
D (5,6)  
NVMFS6H824N  
Features  
• Small Footprint (5x6 mm) for Compact Design  
G (4)  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
S (1,2,3)  
• NVMFS6H824NWF − Wettable Flank Option for Enhanced Optical  
Inspection  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halide Free, and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
DFN5  
V
DSS  
DFNW5 5x6  
(FULL−CUT  
SO8FL WF)  
CASE 507BA  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Gate−to−Source Voltage  
V
20  
V
GS  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
103  
A
C
D
q
JC  
T
C
= 100°C  
82  
(Notes 1, 3)  
MARKING DIAGRAM  
Power Dissipation  
T
= 25°C  
P
115  
58  
W
A
C
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
D
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
19  
S
S
S
G
D
D
q
JA  
XXXXXX  
AYWZZ  
T = 100°C  
A
14  
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
D
3.8  
1.9  
680  
W
R
(Notes 1 & 2)  
q
JA  
D
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
XXXXXX = 6H824N  
XXXXXX = (NVMFS6H824N) or  
XXXXXX = 824NWF  
Operating Junction and Storage Temperature  
Range  
T , T  
J
−55 to  
+175  
°C  
stg  
XXXXXX = (NVMFS6H824NWF)  
Source Current (Body Diode)  
I
96  
A
S
A
Y
= Assembly Location  
= Year  
Single Pulse Drain−to−Source Avalanche  
E
AS  
736  
mJ  
Energy (I  
= 7 A)  
L(pk)  
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in  
the package dimensions section on page 5 of this data  
sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
1.3  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
39.8  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
May, 2022 − Rev. 3  
NVMFS6H824N/D  
 
12345678

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