DATA SHEET
www.onsemi.com
MOSFET – Power, Single,
N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
80 V
2.8 mW @ 10 V
157 A
80 V, 2.8 mW, 157 A
D (5)
NVMFS6H801N
Features
• Small Footprint (5x6 mm) for Compact Design
G (4)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (1,2,3)
N−CHANNEL MOSFET
• NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
1
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
DFN5
V
DSS
(SO−8FL)
CASE 488AA
STYLE 1
DFNW5
(FULL−CUT SO8FL WF)
CASE 507BA
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
D
157
111
166
83
A
C
q
JC
T
C
(Notes 1, 3)
Power Dissipation
T
C
P
D
W
A
MARKING DIAGRAM
R
(Note 1)
q
JC
T
C
= 100°C
D
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
23
S
S
S
G
D
D
q
JA
T = 100°C
A
16
XXXXXX
AYWZZ
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
A
P
D
3.8
1.9
900
W
R
(Notes 1, 2)
q
JA
T = 100°C
A
D
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
A
p
XXXXXX = 6H801N
XXXXXX = (NVMFS6H801N) or
XXXXXX = 801NWF
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
Source Current (Body Diode)
I
S
138
960
A
XXXXXX = (NVMFS6H801NWF)
A
Y
= Assembly Location
= Year
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 12.2 A)
L(pk)
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.9
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
39
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2022 − Rev. 4
NVMFS6H801N/D