Datasheet > NVMFS6H801NT1G

NVMFS6H801NT1G

更新时间： 2024-09-16 11:11:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	320K
描述
单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVMFS6H801NT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Power, Single,

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

80 V

2.8 mW @ 10 V

157 A

80 V, 2.8 mW, 157 A

D (5)

NVMFS6H801N

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

N−CHANNEL MOSFET

• NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DFN5

DSS

(SO−8FL)

CASE 488AA

STYLE 1

DFNW5

(FULL−CUT SO8FL WF)

CASE 507BA

Gate−to−Source Voltage

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

157

111

166

(Notes 1, 3)

Power Dissipation

MARKING DIAGRAM

(Note 1)

= 100°C

Continuous Drain

Current R

Steady

State

T = 25°C

T = 100°C

XXXXXX

AYWZZ

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

3.8

1.9

900

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

XXXXXX = 6H801N

XXXXXX = (NVMFS6H801N) or

XXXXXX = 801NWF

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

Source Current (Body Diode)

138

960

XXXXXX = (NVMFS6H801NWF)

= Assembly Location

= Year

Single Pulse Drain−to−Source Avalanche

Energy (I

= 12.2 A)

L(pk)

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.9

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

May, 2022 − Rev. 4

NVMFS6H801N/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NVMFS6H801NT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H801NT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NWFT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H818NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H818NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H818NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H818NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，123A，3.7mΩ
NVMFS6H818NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，123A，3.7mΩ
NVMFS6H824NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H824NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel

与NVMFS6H801NT1G相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

84
AIC1781A 电池充电控制器深度解析
2024-09-03

78

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS6H801NT1G

NVMFS6H801NT1G 数据手册

与NVMFS6H801NT1G相关器件

与NVMFS6H801NT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS6H801NT1G

NVMFS6H801NT1G 数据手册

与NVMFS6H801NT1G相关器件

与NVMFS6H801NT1G相关文章

您还可以找

您在本页遇到什么问题？