Datasheet > NVMFS6H800NWFT1G

NVMFS6H800NWFT1G

更新时间： 2024-09-16 11:13:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	224K
描述
Single N-Channel Power MOSFET 80V, 203A, 2.1mΩ

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NVMFS6H800NWFT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

80 V, 2.1 mW, 203 A

MAX

I MAX

(BR)DSS

DS(ON)

80 V

2.1 mW @ 10 V

203 A

D (5,6)

NVMFS6H800N

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

N−CHANNEL MOSFET

• NVMFS6H800NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

DFN5

CASE 506EZ

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

XXXXXX

AYWZZ

DSS

DFNW5

CASE 507BA

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

203

143

200

100

XXXXXX = Specific Device Code

(Notes 1, 3)

Steady

State

= Assembly Location

= Year

= Work Week

= Lot Traceability

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Power Dissipation

T = 25°C

3.8

1.9

900

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

166

Single Pulse Drain−to−Source Avalanche

1271

Energy (I

= 16.1 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.75

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2022 − Rev. 3

NVMFS6H800N/D

12 3 4 5 6 7 8

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与NVMFS6H800NWFT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H801NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 2.7 m
NVMFS6H801NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 2.7 m
NVMFS6H801NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NWFT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H818NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H818NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H818NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H818NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，123A，3.7mΩ

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