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NVMFS6B85NLT1G

更新时间： 2024-11-06 01:04:11
品牌 Logo 应用领域
安森美 - ONSEMI /
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6页 86K
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Power MOSFET

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NVMFS6B85NLT1G 数据手册

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NVMFS6B85NL  
Power MOSFET  
100 V, 46 mW, 19 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS6B85NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
46 mW @ 10 V  
72 mW @ 4.5 V  
100 V  
19 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
16  
Unit  
V
V
DSS  
D (5,6)  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current R  
(Notes 1, 2, 3)  
T
= 25°C  
= 100°C  
= 25°C  
I
19  
A
C
D
q
JC  
T
C
14  
Steady  
State  
G (4)  
Power Dissipation  
T
C
P
42  
W
A
D
R
(Notes 1, 2)  
q
JC  
T
C
= 100°C  
21  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
5.6  
4.0  
3.5  
1.75  
93  
q
JA  
T = 100°C  
A
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
MARKING  
DIAGRAM  
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
1
A
p
S
S
S
G
D
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
6B85xx  
AYWZZ  
Source Current (Body Diode)  
I
S
32  
A
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
116  
mJ  
Energy (I  
= 1.7 A)  
L(pk)  
6B85NL = NVMFS6B85NL  
6B85LW = NVMFS6B85NLWF  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
A
= Assembly Location  
= Year  
Y
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Parameter  
Symbol  
Value  
3.6  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
JA  
R
43  
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
August, 2016 − Rev. 0  
NVMFS6B85NL/D  
 
123456

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