Datasheet > NVMFS6D1N08HT1G

NVMFS6D1N08HT1G

更新时间： 2024-11-06 11:14:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	310K
描述
Power MOSFET - 80 V, 5.5 mΩ, 89 A, Single N−Channel

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NVMFS6D1N08HT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

80 V

5.5 mW @ 10 V

89 A

80 V, 5.5 mW, 89 A

D (5,6)

NVMFS6D1N08H

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

N−CHANNEL MOSFET

• NVMFSW6D1N08H − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free

and are RoHS Compliant

Typical Applications

• Synchronous Rectification

• AC−DC and DC−DC Power Supplies

• AC−DC Adapters (USB PD) SR

• Load Switch

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

DFNW5

(FULL−CUT SO8FL WF)

CASE 507BA

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

XXXXXX

AYWZZ

Gate−to−Source Voltage

Continuous Drain

Steady

State

25°C

Current R

(Note 1)

Power Dissipation R

(Note 1)

104

XXXXXX = 6D1N08

XXXXXX = (NVMFS6D1N08H) or

XXXXXX = W6D1N8

Continuous Drain

Current R

Steady

State

T =

25°C

(Notes 1, 2)

XXXXXX = (NVMFSW6D1N08H)

= Assembly Location

= Year

Power Dissipation R

(Notes 1, 2)

3.8

= Work Week

= Lot Traceability

Pulsed Drain Current

T = 25°C, t = 10 ms

468

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

ORDERING INFORMATION

Source Current (Body Diode)

See detailed ordering, marking and shipping information in the

package dimensions section on page 6 of this data sheet.

Single Pulse Drain−to−Source Avalanche

465

Energy (I = 5.9 A)

Lead Temperature Soldering Reflow for

Soldering Purposes (1/8″ from case for 10 s)

300

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

May, 2022 − Rev. 1

NVMFS6D1N08H/D

12 3 4 5 6 7...9

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与NVMFS6D1N08HT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H800NL	ONSEMI	获取价格	Power MOSFET Single NâChannel, 80 V, 1.9 m
NVMFS6H800NLT1G	ONSEMI	获取价格	Power MOSFET Single NâChannel, 80 V, 1.9 m
NVMFS6H800NLWFT1G	ONSEMI	获取价格	Power MOSFET Single NâChannel, 80 V, 1.9 m
NVMFS6H800NT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 203A, 2.1m
NVMFS6H800NWFT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 203A, 2.1m
NVMFS6H801NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 2.7 m
NVMFS6H801NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 2.7 m
NVMFS6H801NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ

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