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NVMFS6B25NLT3G PDF预览

NVMFS6B25NLT3G

更新时间： 2024-11-03 01:04:11
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安森美 - ONSEMI /
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6页 85K
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Power MOSFET

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NVMFS6B25NLT3G 数据手册

 浏览型号NVMFS6B25NLT3G的Datasheet PDF文件第2页浏览型号NVMFS6B25NLT3G的Datasheet PDF文件第3页浏览型号NVMFS6B25NLT3G的Datasheet PDF文件第4页浏览型号NVMFS6B25NLT3G的Datasheet PDF文件第5页浏览型号NVMFS6B25NLT3G的Datasheet PDF文件第6页 
NVMFS6B25NL  
Power MOSFET  
100 V, 24 mW, 33 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS6B25NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
24 mW @ 10 V  
39 mW @ 4.5 V  
100 V  
33 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
16  
Unit  
V
D (5,6)  
V
DSS  
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
GS  
V
T
= 25°C  
I
D
33  
A
C
rent R  
3)  
(Notes 1, 2,  
q
JC  
G (4)  
T
C
= 100°C  
23  
Steady  
State  
Power Dissipation  
(Notes 1, 2)  
T
C
= 25°C  
P
D
62  
31  
8
W
A
R
q
JC  
S (1,2,3)  
N−CHANNEL MOSFET  
T
C
= 100°C  
Continuous Drain Cur-  
T = 25°C  
A
I
D
rent R  
3)  
(Notes 1, 2,  
q
JA  
T = 100°C  
A
6
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1 & 2)  
T = 25°C  
A
P
D
3.6  
1.8  
177  
W
R
q
JA  
T = 100°C  
A
D
1
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
A
S
S
S
G
D
D
p
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
6B25xx  
AYWZZ  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
48  
A
D
Single Pulse Drain−to−Source Avalanche  
E
199  
mJ  
AS  
6B25NL = NVMFS6B25NL  
6B25LW = NVMFS6B25NLWF  
Energy (I  
= 2.0 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
A
Y
= Assembly Location  
= Year  
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
Parameter  
Symbol  
Value  
Unit  
page 5 of this data sheet.  
Junction−to−Case − Steady State  
R
2.4  
42  
°C/W  
q
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
August, 2016 − Rev. 0  
NVMFS6B25NL/D  
 
123456

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