5秒后页面跳转
捷配首页

Datasheet > NVMFS6B14NT3G
NVMFS6B14NT3G PDF预览

NVMFS6B14NT3G

更新时间： 2024-11-03 00:54:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 82K
描述
Single N-Channel Power MOSFET

阅读下载

中文翻译

获取价格

NVMFS6B14NT3G 数据手册

 浏览型号NVMFS6B14NT3G的Datasheet PDF文件第2页浏览型号NVMFS6B14NT3G的Datasheet PDF文件第3页浏览型号NVMFS6B14NT3G的Datasheet PDF文件第4页浏览型号NVMFS6B14NT3G的Datasheet PDF文件第5页浏览型号NVMFS6B14NT3G的Datasheet PDF文件第6页 
NVMFS6B03N  
Power MOSFET  
100 V, 4.8 mW, 145 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS6B03NWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
100 V  
4.8 mW @ 10 V  
145 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
16  
Unit  
V
D (5,6)  
V
DSS  
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
GS  
V
T
= 25°C  
I
D
145  
A
C
G (4)  
rent R  
3)  
(Notes 1, 2,  
q
JC  
T
C
= 100°C  
102  
Steady  
State  
Power Dissipation  
(Notes 1, 2)  
T
C
= 25°C  
P
D
198  
99  
W
A
S (1,2,3)  
N−CHANNEL MOSFET  
R
q
JC  
T
C
= 100°C  
Continuous Drain Cur-  
T = 25°C  
A
I
D
20  
rent R  
3)  
(Notes 1, 2,  
q
JA  
T = 100°C  
A
14  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1 & 2)  
T = 25°C  
A
P
D
3.9  
2.0  
520  
W
R
q
D
JA  
T = 100°C  
A
1
S
S
S
G
D
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
A
p
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
S
160  
180  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I
= 60 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
0.76  
38  
°C/W  
q
JC  
JA  
Junction−to−Ambient − Steady State (Note 2)  
R
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
October, 2015 − Rev. 0  
NVMFS6B03N/D  
 
123456

中文翻译

下载PDF

与NVMFS6B14NT3G相关器件

型号 品牌 获取价格 描述 数据表
NVMFS6B14NWFT1G ONSEMI

获取价格

 		Single N-Channel Power MOSFET
NVMFS6B14NWFT3G ONSEMI

获取价格

 		Single N-Channel Power MOSFET
NVMFS6B25NL ONSEMI

获取价格

 		Power MOSFET
NVMFS6B25NLT1G ONSEMI

获取价格

 		Power MOSFET
NVMFS6B25NLT3G ONSEMI

获取价格

 		Power MOSFET
NVMFS6B25NLWFT1G ONSEMI

获取价格

 		Power MOSFET
NVMFS6B25NLWFT3G ONSEMI

获取价格

 		Power MOSFET
NVMFS6B75NL ONSEMI

获取价格

 		Power MOSFET
NVMFS6B75NLT1G ONSEMI

获取价格

 		Power MOSFET
NVMFS6B75NLT3G ONSEMI

获取价格

 		Power MOSFET

与NVMFS6B14NT3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证