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NVMFS6B14NWFT1G

更新时间： 2024-11-03 00:54:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 82K
描述
Single N-Channel Power MOSFET

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NVMFS6B14NWFT1G 数据手册

 浏览型号NVMFS6B14NWFT1G的Datasheet PDF文件第2页浏览型号NVMFS6B14NWFT1G的Datasheet PDF文件第3页浏览型号NVMFS6B14NWFT1G的Datasheet PDF文件第4页浏览型号NVMFS6B14NWFT1G的Datasheet PDF文件第5页浏览型号NVMFS6B14NWFT1G的Datasheet PDF文件第6页 
NVMFS6B03N  
Power MOSFET  
100 V, 4.8 mW, 145 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS6B03NWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
100 V  
4.8 mW @ 10 V  
145 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
16  
Unit  
V
D (5,6)  
V
DSS  
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
GS  
V
T
= 25°C  
I
D
145  
A
C
G (4)  
rent R  
3)  
(Notes 1, 2,  
q
JC  
T
C
= 100°C  
102  
Steady  
State  
Power Dissipation  
(Notes 1, 2)  
T
C
= 25°C  
P
D
198  
99  
W
A
S (1,2,3)  
N−CHANNEL MOSFET  
R
q
JC  
T
C
= 100°C  
Continuous Drain Cur-  
T = 25°C  
A
I
D
20  
rent R  
3)  
(Notes 1, 2,  
q
JA  
T = 100°C  
A
14  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1 & 2)  
T = 25°C  
A
P
D
3.9  
2.0  
520  
W
R
q
D
JA  
T = 100°C  
A
1
S
S
S
G
D
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
A
p
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
S
160  
180  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I
= 60 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
0.76  
38  
°C/W  
q
JC  
JA  
Junction−to−Ambient − Steady State (Note 2)  
R
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
October, 2015 − Rev. 0  
NVMFS6B03N/D  
 
123456

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