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NVMFS5H663NLT1G

更新时间： 2024-09-10 11:11:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 222K
描述
单 N 沟道，功率 MOSFET，60V，67A，7.2mΩ

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NVMFS5H663NLT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,Reach Compliance Code：compliant
Factory Lead Time：4 weeks风险等级：1.52
Base Number Matches：1

NVMFS5H663NLT1G 数据手册

 浏览型号NVMFS5H663NLT1G的Datasheet PDF文件第2页浏览型号NVMFS5H663NLT1G的Datasheet PDF文件第3页浏览型号NVMFS5H663NLT1G的Datasheet PDF文件第4页浏览型号NVMFS5H663NLT1G的Datasheet PDF文件第5页浏览型号NVMFS5H663NLT1G的Datasheet PDF文件第6页浏览型号NVMFS5H663NLT1G的Datasheet PDF文件第7页 
NVMFS5H663NL,  
NVMFS5H663NLWF  
MOSFET – Power, Single  
N-Channel  
60 V, 7.2 mW, 67 A  
www.onsemi.com  
NVMFS5H663NLWF − Wettable Flank Option for Enhanced  
Optical Inspection.  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Features  
• Small Footprint (5x6 mm) for Compact Design  
7.2 mW @ 10 V  
10 mW @ 4.5 V  
60 V  
67 A  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
D (5)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
G (4)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
67  
A
C
D
q
JC  
T
C
47  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
63  
W
A
D
R
(Note 1)  
q
JC  
MARKING  
DIAGRAM  
T
C
= 100°C  
31.3  
16.2  
11.4  
3.7  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
D
q
JA  
1
T = 100°C  
A
S
S
S
G
D
D
(Notes 1, 2, 3)  
Steady  
State  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
1.8  
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
359  
A
A
p
5H663L = (NVMFS5H663NL) or  
663LWF = (NVMFS5H663NLWF)  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+175  
A
= Assembly Location  
= Year  
Source Current (Body Diode)  
I
S
52  
A
Y
W
ZZ  
= Work Week  
= Lot Traceability  
Single Pulse Drain−to−Source Avalanche  
E
AS  
274  
mJ  
Energy (I  
= 3.8 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 6 of this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.4  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
41  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
July, 2019 − Rev. 2  
NVMFS5H663NL/D  
 
12345678

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