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NVMFS6B03NLT1G

更新时间： 2024-09-10 01:03:43
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安森美 - ONSEMI /
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6页 84K
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Single N−Channel Power MOSFET

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NVMFS6B03NLT1G 数据手册

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NVMFS6B03NL  
Advance Information  
Power MOSFET  
100 V, 4.8 mW, 145 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• NVMFS6B03NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
100 V  
4.8 mW @ 10 V  
145 A  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
D (5,6)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
16  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
GS  
V
G (4)  
T
= 25°C  
I
D
145  
A
C
rent R  
3)  
(Notes 1, 2,  
q
JC  
T
C
= 100°C  
102  
S (1,2,3)  
N−CHANNEL MOSFET  
Steady  
State  
Power Dissipation  
(Notes 1, 2)  
T
C
= 25°C  
P
D
198  
99  
W
A
R
q
JC  
T
C
= 100°C  
MARKING  
DIAGRAM  
Continuous Drain Cur-  
T = 25°C  
A
I
D
20  
rent R  
3)  
(Notes 1, 2,  
q
JA  
T = 100°C  
A
14  
Steady  
State  
D
1
Power Dissipation  
(Notes 1 & 2)  
T = 25°C  
A
P
D
3.9  
2.0  
520  
W
S
S
S
G
D
D
R
q
JA  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
D
J
stg  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Source Current (Body Diode)  
I
160  
180  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
I
= 60 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
0.76  
38  
°C/W  
q
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
October, 2015 − Rev. P0  
NVMFS6B03NL/D  
 
123456

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