NVMFS6B05NL
Advance Information
Power MOSFET
100 V, 8.0 mW, 114 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVMFS6B05NLWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
8.0 mW @ 10 V
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
100 V
114 A
11.3 mW @ 4.5 V
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
16
Unit
V
D (5,6)
V
DSS
Gate−to−Source Voltage
Continuous Drain Cur-
V
GS
V
T
= 25°C
I
D
114
A
C
G (4)
rent R
3)
(Notes 1, 2,
q
JC
T
C
= 100°C
80
Steady
State
Power Dissipation
(Notes 1, 2)
T
C
= 25°C
P
D
165
83
W
A
S (1,2,3)
N−CHANNEL MOSFET
R
q
JC
T
C
= 100°C
Continuous Drain Cur-
T = 25°C
A
I
D
17
rent R
3)
(Notes 1, 2,
q
JA
T = 100°C
A
12
MARKING
DIAGRAM
Steady
State
Power Dissipation
(Notes 1 & 2)
T = 25°C
A
P
D
3.8
1.9
330
W
D
R
q
JA
T = 100°C
A
1
S
S
S
G
D
D
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
A
p
DM
XXXXXX
AYWZZ
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
D
Source Current (Body Diode)
I
S
130
125
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (T = 25°C, V = 50 V, V = 10 V,
J
DD
GS
I
= 50 A, L = 0.1 mH, R = 25 W)
L(pk)
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
0.9
39
°C/W
q
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2015 − Rev. P1
NVMFS6B05NL/D