Datasheet > NVMFS6B14NLT3G

NVMFS6B14NLT3G

更新时间： 2024-09-15 01:04:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	85K
描述
Power MOSFET

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NVMFS6B14NLT3G 数据手册

NVMFS6B14NL

Power MOSFET

100 V, 13 mW, 55 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS6B14NLWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

13 mW @ 10 V

19 mW @ 4.5 V

100 V

55 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

D (5,6)

DSS

Gate−to−Source Voltage

Continuous Drain Cur-

= 25°C

= 100°C

= 25°C

rent R

(Notes 1, 3)

Steady

State

G (4)

Power Dissipation R

(Note 1)

= 100°C

S (1,2,3)

N−CHANNEL MOSFET

Continuous Drain Cur-

rent R (Notes 1, 2, 3)

T = 25°C

T = 100°C

8.0

3.8

1.9

140

Steady

State

Power Dissipation R

(Notes 1 & 2)

T = 25°C

MARKING

DIAGRAM

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

XXXXXX

AYWZZ

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I

= 24 A)

L(pk)

XXXXXX = 6B14NL

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

(NVMFS6B14NL) or

6B14LW

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

(NVMFS6B14NLWF)

= Assembly Location

= Year

THERMAL RESISTANCE MAXIMUM RATINGS

= Work Week

= Lot Traceability

Parameter

Symbol

Value

1.6

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

January, 2016 − Rev. 1

NVMFS6B14NL/D

12 3 4 5 6

中文翻译

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NVMFS6B14NLT3G 替代型号

型号	品牌	替代类型	描述	数据表
NVMFS6B14NLT1G	ONSEMI	类似代替	Power MOSFET

与NVMFS6B14NLT3G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6B14NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS6B14NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS6B14NT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET
NVMFS6B14NT3G	ONSEMI	获取价格	Single N-Channel Power MOSFET
NVMFS6B14NWFT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET
NVMFS6B14NWFT3G	ONSEMI	获取价格	Single N-Channel Power MOSFET
NVMFS6B25NL	ONSEMI	获取价格	Power MOSFET
NVMFS6B25NLT1G	ONSEMI	获取价格	Power MOSFET
NVMFS6B25NLT3G	ONSEMI	获取价格	Power MOSFET
NVMFS6B25NLWFT1G	ONSEMI	获取价格	Power MOSFET

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