5秒后页面跳转
NVMFS6B03NL_16 PDF预览

NVMFS6B03NL_16

更新时间: 2024-09-10 01:04:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 88K
描述
Power MOSFET

NVMFS6B03NL_16 数据手册

 浏览型号NVMFS6B03NL_16的Datasheet PDF文件第2页浏览型号NVMFS6B03NL_16的Datasheet PDF文件第3页浏览型号NVMFS6B03NL_16的Datasheet PDF文件第4页浏览型号NVMFS6B03NL_16的Datasheet PDF文件第5页浏览型号NVMFS6B03NL_16的Datasheet PDF文件第6页 
NVMFS6B03NL  
Power MOSFET  
100 V, 4 mW, 145 A, Single N−Channel  
Features  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
NVMFS6B03NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
AEC−Q101 Qualified and PPAP Capable  
These Devices are Pb−Free and are RoHS Compliant  
4 mW @ 10 V  
6 mW @ 4.5 V  
100 V  
145 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
16  
Unit  
V
D (5,6)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current R  
(Notes 1, 3)  
T
= 25°C  
I
145  
A
C
D
G (4)  
q
JC  
T
C
= 100°C  
102  
Steady  
State  
Power Dissipation  
T
C
= 25°C  
P
198  
99  
W
A
D
S (1,2,3)  
N−CHANNEL MOSFET  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
20  
q
JA  
T = 100°C  
A
14  
(Notes 1, 2, 3)  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
3.9  
2.0  
520  
W
D
R
(Notes 1 & 2)  
q
JA  
D
T = 100°C  
A
1
S
S
S
G
D
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
XXXXXX  
AYWZZ  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Operating Junction and Storage Temperature  
T , T  
55 to  
+ 175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
160  
180  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
XXXXXX = 6B03NL (NVMFS6B03NL) or  
XXXXXX = 6B03LW (NVMFS6B03NLWF)  
Energy (I  
= 60 A)  
L(pk)  
A
Y
= Assembly Location  
= Year  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
Parameter  
Symbol  
Value  
Unit  
page 5 of this data sheet.  
Junction−to−Case − Steady State  
R
0.76  
38  
°C/W  
q
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
January, 2016 − Rev. 0  
NVMFS6B03NL/D  
 

与NVMFS6B03NL_16相关器件

型号 品牌 获取价格 描述 数据表
NVMFS6B03NLT1G ONSEMI

获取价格

Single N−Channel Power MOSFET
NVMFS6B03NLT3G ONSEMI

获取价格

Single N−Channel Power MOSFET
NVMFS6B03NLWFT1G ONSEMI

获取价格

Single N−Channel Power MOSFET
NVMFS6B03NLWFT3G ONSEMI

获取价格

Single N−Channel Power MOSFET
NVMFS6B03NT1G ONSEMI

获取价格

Single N-Channel Power MOSFET
NVMFS6B03NT3G ONSEMI

获取价格

Single N-Channel Power MOSFET
NVMFS6B03NWFT1G ONSEMI

获取价格

Single N-Channel Power MOSFET
NVMFS6B03NWFT3G ONSEMI

获取价格

Single N-Channel Power MOSFET
NVMFS6B05N ONSEMI

获取价格

Single N-Channel Power MOSFET
NVMFS6B05NL ONSEMI

获取价格

Single N−Channel Power MOSFET