NVMFS6B03NL
Power MOSFET
100 V, 4 mW, 145 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• NVMFS6B03NLWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
4 mW @ 10 V
6 mW @ 4.5 V
100 V
145 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
16
Unit
V
D (5,6)
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
(Notes 1, 3)
T
= 25°C
I
145
A
C
D
G (4)
q
JC
T
C
= 100°C
102
Steady
State
Power Dissipation
T
C
= 25°C
P
198
99
W
A
D
S (1,2,3)
N−CHANNEL MOSFET
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
20
q
JA
T = 100°C
A
14
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.9
2.0
520
W
D
R
(Notes 1 & 2)
q
JA
D
T = 100°C
A
1
S
S
S
G
D
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
XXXXXX
AYWZZ
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
D
Source Current (Body Diode)
I
160
180
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
XXXXXX = 6B03NL (NVMFS6B03NL) or
XXXXXX = 6B03LW (NVMFS6B03NLWF)
Energy (I
= 60 A)
L(pk)
A
Y
= Assembly Location
= Year
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
Parameter
Symbol
Value
Unit
page 5 of this data sheet.
Junction−to−Case − Steady State
R
0.76
38
°C/W
q
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2016 − Rev. 0
NVMFS6B03NL/D