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NVMFS5C677NLT1G

更新时间： 2024-09-10 11:13:23
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安森美 - ONSEMI /
页数 文件大小 规格书
7页 226K
描述
功率 MOSFET，单 N 沟道，60 V，36 A，15.0 mΩ

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NVMFS5C677NLT1G 数据手册

 浏览型号NVMFS5C677NLT1G的Datasheet PDF文件第2页浏览型号NVMFS5C677NLT1G的Datasheet PDF文件第3页浏览型号NVMFS5C677NLT1G的Datasheet PDF文件第4页浏览型号NVMFS5C677NLT1G的Datasheet PDF文件第5页浏览型号NVMFS5C677NLT1G的Datasheet PDF文件第6页浏览型号NVMFS5C677NLT1G的Datasheet PDF文件第7页 
NVMFS5C677NL  
MOSFET – Power, Single  
N-Channel  
60 V, 15.0 mW, 36 A  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• NVMFS5C677NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
15.0 mW @ 10 V  
21.5 mW @ 4.5 V  
60 V  
36 A  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D (5)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
G (4)  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
36  
A
C
D
q
JC  
T
C
25  
(Notes 1, 3)  
Steady  
State  
S (1,2,3)  
N−CHANNEL MOSFET  
Power Dissipation  
T
C
P
37  
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
18  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
11  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
7.8  
3.5  
1.8  
166  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
D
1
R
(Notes 1 & 2)  
q
JA  
S
S
S
G
D
D
T = 100°C  
A
XXXXXX  
AYWZZ  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
31  
65  
A
XXXXXX = 5C677L  
XXXXXX = (NVMFS5C677NL) or  
XXXXXX = 677LWF  
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 2.87 A)  
L(pk)  
XXXXXX = (NVMFS5C677NLWF)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
A
Y
= Assembly Location  
= Year  
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Parameter  
Symbol  
Value  
4.1  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
43  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
July, 2019 − Rev. 0  
NVMFS5C677NL/D  
 
1234567

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