Datasheet > NVMFS5C680NLWFT1G

NVMFS5C680NLWFT1G

更新时间： 2024-09-10 11:14:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	296K
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Power MOSFET,N-Channel, 60 V, 21 A, 27.5 mΩ

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DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(on)

27.5 mW @ 10 V

43.0 mW @ 4.5 V

60 V

21 A

60 V, 27.5 mW, 21 A

N−Channel

D (5 − 8)

NVMFS5C680NL

Features

 Small Footprint (5 x 6 mm) for Compact Design

 Low R

to Minimize Conduction Losses

DS(on)

G (4)

 Low Capacitance to Minimize Driver Losses

 NVMFS5C680NLWF − Wettable Flanks Product

 AEC−Q101 Qualified and PPAP Capable

S (1, 2, 3)

 These Devices are Pb−Free and are RoHS Compliant

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

DFN5

XXXXXX

AYWZZ

Gate−to−Source Voltage

20

(SO−8FL)

CASE 488AA

STYLE 1

Continuous Drain

Current R

= 25C

= 100C

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

= 25C

(Notes 1, 2, 3)

= 100C

XXXXXX

AYWZZ

Continuous Drain

Current R

T = 25C

8.1

DFNW5

(FULL−CUT SO8FL WF)

T = 100C

5.7

(Notes 1 & 3, 4)

Steady

State

CASE 507BA

Power Dissipation

T = 25C

3.4

1.7

(Notes 1, 3)

T = 100C

Pulsed Drain Current

T = 25C, t = 10 ms

XXXXXX = 5C680L (NVMFS5C680NL) or

680LWF (NVMFS5C680NLWF)

Operating Junction and Storage Temperature

T , T

−55 to

+175

C

stg

= Assembly Location

= Year

= Work Week

= Lot Traceability

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

44.6

Energy (I

= 1.5 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8 from case for 10 s)

260

C

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

6.3

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

 Semiconductor Components Industries, LLC, 2017

Publication Order Number:

September, 2022 − Rev. 1

NVMFS5C680NL/D

12 3 4 5 6 7 8

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