Datasheet > NTLJD3119C

NTLJD3119C

更新时间： 2024-11-12 03:45:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	174K
描述
Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package

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NTLJD3119C 数据手册

NTLJD3119C

Power MOSFET

20 V/−20 V, 4.6 A/−4.1 A, mCoolt

Complementary, 2x2 mm, WDFN Package

Features

• Complementary N−Channel and P−Channel MOSFET

• WDFN Package with Exposed Drain Pad for Excellent Thermal

http://onsemi.com

Conduction

• Footprint Same as SC−88 Package

MAX

I MAX

(BR)DSS

DS(on)

• Leading Edge Trench Technology for Low On Resistance

• 1.8 V Gate Threshold Voltage

65 mW @ 4.5 V

75 mW @ 2.5 V

3.8 A

2.0 A

N−Channel

20 V

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

120 mW @ 1.8 V

100 mW @ −4.5 V

135 mW @ −2.5 V

200 mW @ −1.8 V

1.7 A

−4.1 A

−2.0 A

−1.6 A

• This is a Pb−Free Device

Applications

P−Channel

−20 V

• Synchronous DC−DC Conversion Circuits

• Load/Power Management of Portable Devices like PDA’s, Cellular

Phones and Hard Drives

• Color Display and Camera Flash Regulators

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

−20

8.0

Unit

WDFN6

CASE 506AN

JMMG

N−Ch

P−Ch

N−Ch

P−Ch

DSS

Pin 1

Gate−to−Source Voltage

JD = Specific Device Code

= Date Code

= Pb−Free Package

T = 25°C

3.8

2.8

4.6

N−Channel

Continuous Drain

Current (Note 1)

Steady

State

(Note: Microdot may be in either location)

T = 85°C

t ≤ 5 s

T = 25°C

PIN CONNECTIONS

T = 25°C

−3.3

−2.4

−4.1

1.5

P−Channel

Continuous Drain

Current (Note 1)

Steady

State

T = 85°C

t ≤ 5 s

Steady

State

T = 25°C

Power Dissipation

(Note 1)

T = 25°C

t ≤ 5 s

2.3

2.6

T = 25°C

N−Channel

Continuous Drain

Current (Note 2)

P−Channel

Continuous Drain

Current (Note 2)

Steady

State

T = 85°C

1.9

T = 25°C

−2.3

−1.6

0.71

Steady

State

T = 85°C

(Top View)

Power Dissipation

(Note 2)

Steady

State

T = 25°C

ORDERING INFORMATION

N−Ch

P−Ch

−20

−55 to

150

Pulsed Drain Current

t = 10 ms

†

Device

Package

Shipping

NTLJD3119CTAG

WDFN6

3000/Tape & Reel

Operating Junction and Storage Temperature T , T

°C

STG

(Pb−Free)

Lead Temperature for Soldering Purposes

260

NTLJD3119CTBG

WDFN6

3000/Tape & Reel

(1/8″ from case for 10 s)

(Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size

of 30 mm , 2 oz Cu.

Publication Order Number:

October, 2006 − Rev. 0

NTLJD3119C/D

12 3 4 5 6 7...10

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与NTLJD3119C相关器件

型号	品牌	获取价格	描述	数据表
NTLJD3119CTAG	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Packa
NTLJD3119CTBG	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Packa
NTLJD3181PZ	ONSEMI	获取价格	Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3181PZTAG	ONSEMI	获取价格	Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3181PZTBG	ONSEMI	获取价格	Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3182FZ	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTAG	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTBG	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V,
NTLJD3183CZ	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD3183CZTAG	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.7 A/−4

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