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NTLJD3119C

更新时间： 2024-11-01 03:45:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 174K
描述
Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package

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NTLJD3119C 数据手册

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NTLJD3119C  
Power MOSFET  
20 V/−20 V, 4.6 A/−4.1 A, mCoolt  
Complementary, 2x2 mm, WDFN Package  
Features  
• Complementary N−Channel and P−Channel MOSFET  
• WDFN Package with Exposed Drain Pad for Excellent Thermal  
http://onsemi.com  
Conduction  
• Footprint Same as SC−88 Package  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• Leading Edge Trench Technology for Low On Resistance  
• 1.8 V Gate Threshold Voltage  
65 mW @ 4.5 V  
75 mW @ 2.5 V  
3.8 A  
2.0 A  
N−Channel  
20 V  
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments  
120 mW @ 1.8 V  
100 mW @ −4.5 V  
135 mW @ −2.5 V  
200 mW @ −1.8 V  
1.7 A  
−4.1 A  
−2.0 A  
−1.6 A  
• This is a Pb−Free Device  
Applications  
P−Channel  
−20 V  
• Synchronous DC−DC Conversion Circuits  
• Load/Power Management of Portable Devices like PDA’s, Cellular  
Phones and Hard Drives  
• Color Display and Camera Flash Regulators  
MARKING  
DIAGRAM  
D2  
D1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
20  
−20  
8.0  
Unit  
1
2
3
6
5
4
WDFN6  
CASE 506AN  
JMMG  
N−Ch  
P−Ch  
N−Ch  
P−Ch  
V
DSS  
V
G
Pin 1  
Gate−to−Source Voltage  
V
GS  
V
A
JD = Specific Device Code  
M
G
= Date Code  
= Pb−Free Package  
T = 25°C  
3.8  
2.8  
4.6  
N−Channel  
Continuous Drain  
Current (Note 1)  
I
D
Steady  
State  
A
(Note: Microdot may be in either location)  
T = 85°C  
A
t ≤ 5 s  
T = 25°C  
A
PIN CONNECTIONS  
D1  
T = 25°C  
−3.3  
−2.4  
−4.1  
1.5  
P−Channel  
Continuous Drain  
Current (Note 1)  
I
A
Steady  
State  
A
D
T = 85°C  
A
t ≤ 5 s  
Steady  
State  
T = 25°C  
A
S1  
G1  
D2  
D1  
G2  
S2  
1
2
3
6
5
4
Power Dissipation  
(Note 1)  
P
I
W
D
T = 25°C  
A
t ≤ 5 s  
2.3  
2.6  
T = 25°C  
A
N−Channel  
Continuous Drain  
Current (Note 2)  
P−Channel  
Continuous Drain  
Current (Note 2)  
A
A
D
Steady  
State  
D2  
T = 85°C  
A
1.9  
T = 25°C  
A
−2.3  
−1.6  
0.71  
I
D
Steady  
State  
T = 85°C  
A
(Top View)  
Power Dissipation  
(Note 2)  
Steady  
State  
P
W
A
D
T = 25°C  
A
ORDERING INFORMATION  
N−Ch  
P−Ch  
18  
−20  
−55 to  
150  
Pulsed Drain Current  
t = 10 ms  
p
I
DM  
†
Device  
Package  
Shipping  
NTLJD3119CTAG  
WDFN6  
3000/Tape & Reel  
Operating Junction and Storage Temperature T , T  
°C  
°C  
J
STG  
(Pb−Free)  
Lead Temperature for Soldering Purposes  
T
260  
L
NTLJD3119CTBG  
WDFN6  
3000/Tape & Reel  
(1/8″ from case for 10 s)  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
2. Surface Mounted on FR4 Board using the minimum recommended pad size  
2
of 30 mm , 2 oz Cu.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 0  
NTLJD3119C/D  
1234567...10

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