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NTLJD4116NT1G PDF预览

NTLJD4116NT1G

更新时间： 2024-11-01 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 81K
描述
Power MOSFET

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中文翻译

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NTLJD4116NT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DFN包装说明：SMALL OUTLINE, S-XDSO-C6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：11 weeks
风险等级：2.11其他特性：LOGIC LEVEL COMPATIBLE
外壳连接：DRAIN配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：3 A
最大漏极电流 (ID)：2.5 A最大漏源导通电阻：0.09 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：S-XDSO-C6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.52 W
最大脉冲漏极电流 (IDM)：20 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTLJD4116NT1G 数据手册

 浏览型号NTLJD4116NT1G的Datasheet PDF文件第2页浏览型号NTLJD4116NT1G的Datasheet PDF文件第3页浏览型号NTLJD4116NT1G的Datasheet PDF文件第4页浏览型号NTLJD4116NT1G的Datasheet PDF文件第5页浏览型号NTLJD4116NT1G的Datasheet PDF文件第6页浏览型号NTLJD4116NT1G的Datasheet PDF文件第7页 
NTLJD4116N  
Power MOSFET  
30 V, 4.6 A, mCoolt Dual N−Channel,  
2x2 mm WDFN Package  
Features  
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal  
Conduction  
http://onsemi.com  
• 2x2 mm Footprint Same as SC−88  
V
R
MAX  
I MAX (Note 1)  
D
(BR)DSS  
DS(on)  
• Lowest R  
• 1.5 V R  
Solution in 2x2 mm Package  
DS(on)  
70 mW @ 4.5 V  
90 mW @ 2.5 V  
125 mW @ 1.8 V  
250 mW @ 1.5 V  
Rating for Operation at Low Voltage Gate Drive Logic  
DS(on)  
30 V  
4.6 A  
Level  
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments  
• This is a Pb−Free Device  
D
Applications  
• DC−DC Converters (Buck and Boost Circuits)  
• Low Side Load Switch  
• Optimized for Battery and Load Management Applications in  
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.  
• Level Shift for High Side Load Switch  
G
S
N−CHANNEL MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
1
2
3
6
5
4
WDFN6  
CASE 506AN  
JFMG  
Gate−to−Source Voltage  
V
8.0  
3.7  
2.7  
4.6  
1.5  
V
GS  
G
Continuous Drain  
Current (Note 1)  
I
A
T = 25°C  
D
A
Steady  
State  
1
T = 85°C  
A
JF = Specific Device Code  
M
G
= Date Code  
= Pb−Free Package  
t ≤ 5 s  
T = 25°C  
A
Power Dissipation  
(Note 1)  
P
W
Steady  
State  
D
D
(Note: Microdot may be in either location)  
T = 25°C  
A
t ≤ 5 s  
2.3  
2.5  
PIN CONNECTIONS  
Continuous Drain  
Current (Note 2)  
I
A
T = 25°C  
A
D
D1  
T = 85°C  
A
1.8  
Steady  
State  
S1  
G1  
D2  
D1  
1
2
3
6
5
4
Power Dissipation  
(Note 2)  
P
0.71  
W
T = 25°C  
A
G2  
S2  
Pulsed Drain Current  
t = 10 ms  
I
20  
A
p
DM  
D2  
Operating Junction and Storage Temperature T , T  
−55 to  
150  
°C  
J
STG  
Source Current (Body Diode) (Note 2)  
I
2.0  
A
S
(Top View)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†
Device  
Package  
Shipping  
NTLJD4116NT1G  
WDFN6  
3000/Tape & Reel  
(Pb−Free)  
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Surface Mounted on FR4 Board using the minimum recommended pad size  
2
of 30 mm , 2 oz Cu.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 4  
NTLJD4116N/D  
 
1234567

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