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NTLJD4150P PDF预览

NTLJD4150P

更新时间： 2024-09-24 03:45:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 81K
描述
Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package

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NTLJD4150P 技术参数

生命周期：ObsoleteReach Compliance Code：compliant
风险等级：5.61最大漏极电流 (Abs) (ID)：3.4 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2.3 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

NTLJD4150P 数据手册

 浏览型号NTLJD4150P的Datasheet PDF文件第2页浏览型号NTLJD4150P的Datasheet PDF文件第3页浏览型号NTLJD4150P的Datasheet PDF文件第4页浏览型号NTLJD4150P的Datasheet PDF文件第5页浏览型号NTLJD4150P的Datasheet PDF文件第6页浏览型号NTLJD4150P的Datasheet PDF文件第7页 
NTLJD4150P  
Power MOSFET  
−30 V, −3.4 A, mCoolt Dual P−Channel,  
2x2 mm WDFN Package  
Features  
http://onsemi.com  
• WDFN 2x2 mm Package Provides Exposed Drain Pad for  
Excellent Thermal Conduction  
R
DS(on)  
Max  
I
Max (Note 1)  
D
V
(BR)DSS  
• Footprint Same as SC−88 Package  
135 mW @ 10 V  
200 mW @ 4.5 V  
−30 V  
−3.4 A  
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments  
• Bidirectional Current Flow with Common Source Configuration  
• This is a Pb−Free Device  
S1  
S2  
Applications  
• Li−Ion Battery Charging and Protection Circuits  
• LED Backlight, Flashlight  
• Dual−High Side Load Switch  
G1  
G2  
D1  
D2  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
P−CHANNEL MOSFET P−CHANNEL MOSFET  
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
−30  
20  
V
V
A
DSS  
MARKING  
DIAGRAM  
D2  
D1  
Gate−to−Source Voltage  
V
GS  
Continuous Drain Current  
(Note 1)  
I
D
T = 25°C  
−2.7  
−2.0  
−3.4  
1.5  
A
Steady  
State  
1
2
3
6
5
4
JE M G  
T = 85°C  
A
WDFN6  
G
CASE 506AN  
Pin 1  
t ≤ 5 s  
T = 25°C  
A
Power Dissipation  
(Note 1)  
P
W
Steady  
State  
D
D
JE  
M
G
= Specific Device Code  
= Date Code  
T = 25°C  
A
t ≤ 5 s  
2.3  
−1.8  
−1.4  
0.7  
= Pb−Free Package  
Continuous Drain Current  
(Note 2)  
I
A
T = 25°C  
A
D
(Note: Microdot may be in either location)  
T = 85°C  
A
Steady  
State  
Power Dissipation  
(Note 2)  
P
W
PIN CONNECTIONS  
D1  
T = 25°C  
A
Pulsed Drain Current  
t = 10 ms  
p
I
−14  
A
DM  
S1  
G1  
D2  
D1  
G2  
S2  
1
2
3
6
5
4
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
T
STG  
Source Current (Body Diode) (Note 2)  
I
−1.8  
260  
A
S
D2  
Lead Temperature for Soldering Purposes  
T
°C  
L
(1/8″ from case for 10 s)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Top View)  
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
2. Surface Mounted on FR4 Board using the minimum recommended pad size.  
ORDERING INFORMATION  
†
Device  
NTLJD4150PTBG  
Package  
Shipping  
WDFN6  
3000 / Tape &  
Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 0  
NTLJD4150P/D  
 
1234567

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