Datasheet > NTLJF3118NTAG

NTLJF3118NTAG

更新时间： 2024-09-24 03:12:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体肖特基二极管晶体管开关脉冲
页数	文件大小	规格书
7页	155K
描述
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package

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中文翻译

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NTLJF3118NTAG 数据手册

NTLJF3118N

Power MOSFET and

Schottky Diode

20 V, 4.6 A, mCool] N−Channel, with

2.0 A Schottky Barrier Diode, 2x2 mm

WDFN Package

http://onsemi.com

MOSFET

Features

Max

I Max

• WDFN 2x2 mm Package Provides Exposed Drain Pad for

Excellent Thermal Conduction

(BR)DSS

DS(on)

65 mW @ 4.5 V

75 mW @ 2.5 V

120 mW @ 1.8 V

3.8 A

2.0 A

1.7 A

• Footprint Same as SC−88 Package

20 V

• 1.8 V V Rated R

DS(on)

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• Low VF 2 A Schottky Diode

SCHOTTKY DIODE

Max

V Typ

I Max

• This is a Pb−Free Device

Applications

20 V

0.41 V

2.0 A

• DC−DC Boost/Buck Converter

• Low Voltage Hard Disk DC Power Source

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage

Continuous Drain Current

(Note 1)

T = 25°C

3.8

2.8

4.6

1.5

N−CHANNEL MOSFET

SCHOTTKY DIODE

Steady

State

T = 85°C

MARKING

DIAGRAM

t ≤ 5 s T = 25°C

Power Dissipation

(Note 1)

Steady

State

T = 25°C

JK M G

WDFN6

t ≤ 5 s

2.2

2.6

1.9

0.7

CASE 506AN

Continuous Drain Current

(Note 2)

T = 25°C

T = 85°C

Steady

State

= Specific Device Code

= Date Code

= Pb−Free Package

Power Dissipation

(Note 2)

T = 25°C

(Note: Microdot may be in either location)

Pulsed Drain Current

t = 10 ms

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

PIN CONNECTIONS

Source Current (Body Diode)

1.8

Lead Temperature for Soldering Purposes

260

°C

N/C

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 2 in sq pad size

(Cu area = 1.127 in sq [2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size.

(Top View)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Publication Order Number:

October, 2006 − Rev. 0

NTLJF3118N/D

12 3 4 5 6 7

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与NTLJF3118NTAG相关器件

型号	品牌	获取价格	描述	数据表
NTLJF3118NTBG	ONSEMI	获取价格	Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier
NTLJF4156N	ONSEMI	获取价格	Typical Uses for FETKY Devices
NTLJF4156NT1G	ROCHESTER	获取价格	2.5A, 30V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN
NTLJF4156NT1G	ONSEMI	获取价格	单 N 沟道功率 MOSFET 和肖特基二极管 30V 4.6A 70mΩ
NTLJF4156NTAG	ROCHESTER	获取价格	2.5A, 30V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, LEAD FREE, CASE 506AN-01, WDFN
NTLJF4156NTAG	ONSEMI	获取价格	单 N 沟道功率 MOSFET 和肖特基二极管 30V 4.6A 70mΩ
NTLJS1102P	ONSEMI	获取价格	Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package
NTLJS1102PTAG	ONSEMI	获取价格	Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package
NTLJS1102PTBG	ONSEMI	获取价格	Power MOSFET −8 V, −8.1 A, COOL Single P−Channel, 2x2 mm, WDFN package
NTLJS14D0P03P8ZTAG	ONSEMI	获取价格	MOSFET, -30V P-Channel WDFN6

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