Datasheet > NTLJD4150P_07

NTLJD4150P_07

更新时间： 2024-11-01 03:45:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	81K
描述
Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTLJD4150P_07 数据手册

NTLJD4150P

Power MOSFET

−30 V, −3.4 A, mCoolt Dual P−Channel,

2x2 mm WDFN Package

Features

http://onsemi.com

• WDFN 2x2 mm Package Provides Exposed Drain Pad for

Excellent Thermal Conduction

DS(on)

Max

Max (Note 1)

(BR)DSS

• Footprint Same as SC−88 Package

135 mW @ 10 V

200 mW @ 4.5 V

−30 V

−3.4 A

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• Bidirectional Current Flow with Common Source Configuration

• This is a Pb−Free Device

Applications

• Li−Ion Battery Charging and Protection Circuits

• LED Backlight, Flashlight

• Dual−High Side Load Switch

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

P−CHANNEL MOSFET P−CHANNEL MOSFET

Parameter

Drain−to−Source Voltage

Symbol Value Unit

−30

DSS

MARKING

DIAGRAM

Gate−to−Source Voltage

Continuous Drain Current

(Note 1)

T = 25°C

−2.7

−2.0

−3.4

1.5

Steady

State

JE M G

T = 85°C

WDFN6

CASE 506AN

Pin 1

t ≤ 5 s

T = 25°C

Power Dissipation

(Note 1)

Steady

State

= Specific Device Code

= Date Code

T = 25°C

t ≤ 5 s

2.3

−1.8

−1.4

0.7

= Pb−Free Package

Continuous Drain Current

(Note 2)

T = 25°C

(Note: Microdot may be in either location)

T = 85°C

Steady

State

Power Dissipation

(Note 2)

PIN CONNECTIONS

T = 25°C

Pulsed Drain Current

t = 10 ms

−14

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

STG

Source Current (Body Diode) (Note 2)

−1.8

260

Lead Temperature for Soldering Purposes

°C

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Top View)

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size.

ORDERING INFORMATION

†

Device

NTLJD4150PTBG

Package

Shipping

WDFN6

3000 / Tape &

Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

January, 2007 − Rev. 0

NTLJD4150P/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTLJD4150P_07相关器件

型号	品牌	获取价格	描述	数据表
NTLJD4150PTBG	ONSEMI	获取价格	Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package
NTLJF1103PT1G	ONSEMI	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
NTLJF117P	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTLJF156N	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTLJF3117P	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Sch
NTLJF3117P_1	ONSEMI	获取价格	Typical Uses for FETKY Devices
NTLJF3117PT1G	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Sch
NTLJF3117PTAG	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Sch
NTLJF3118N	ONSEMI	获取价格	Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier
NTLJF3118NTAG	ONSEMI	获取价格	Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier

与NTLJD4150P_07相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

NTLJD4150P_07

NTLJD4150P_07 数据手册

与NTLJD4150P_07相关器件

与NTLJD4150P_07相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTLJD4150P_07

NTLJD4150P_07 数据手册

与NTLJD4150P_07相关器件

与NTLJD4150P_07相关文章

您还可以找

您在本页遇到什么问题？