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NTLJF1103PT1G

更新时间： 2024-11-01 20:42:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 71K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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NTLJF1103PT1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NTLJF1103PT1G 数据手册

 浏览型号NTLJF1103PT1G的Datasheet PDF文件第2页浏览型号NTLJF1103PT1G的Datasheet PDF文件第3页浏览型号NTLJF1103PT1G的Datasheet PDF文件第4页 
NTLJF1103P  
Product Preview  
Power MOSFET and  
Schottky Diode  
−8 V, −4.3 A, mCoolꢀ P−Channel, with  
2.0 A Schottky Barrier Diode, 2x2 mm,  
WDFN Package  
http://onsemi.com  
MOSFET  
V
R
Max  
I Max (Note 1)  
D
(BR)DSS  
DS(on)  
Features  
90 mW @ −4.5 V  
120 mW @ −2.5 V  
• WDFN 2x2 mm Package with Exposed Drain Pad for  
Excellent Thermal Conduction  
• Footprint Same as SC−88 Package  
−8 V  
−4.3 A  
150 mW @ −1.8 V  
170 mW @ −1.5 V  
• 1.5 V V Rated R  
)
GS  
DS(on  
• Low V , 2 A Schottky Diode  
F
SCHOTTKY DIODE  
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment  
V
R
Max  
V Typ  
F
I Max  
F
• This is a Pb−Free Device  
20 V  
0.37 V  
2.0 A  
Applications  
• DC−DC Buck Converter  
D
A
K
• Low Voltage Hard Disk DC Power Source  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
G
V
−8  
6
V
V
A
DSS  
Gate−to−Source Voltage  
V
GS  
S
Continuous Drain Current  
(Note 1)  
I
D
T = 25°C  
A
−3.5  
−2.5  
−4.3  
1.5  
Steady  
State  
P−CHANNEL MOSFET  
SCHOTTKY DIODE  
T = 85°C  
A
t ≤ 5 s T = 25°C  
MARKING  
DIAGRAM  
A
Power Dissipation  
(Note 1)  
P
W
Steady  
State  
D
T = 25°C  
A
1
1
2
3
6
5
4
t ≤ 5 s  
2.3  
−2.4  
−1.7  
0.7  
JG M G  
WDFN6  
G
Continuous Drain Current  
(Note 2)  
I
A
T = 25°C  
A
CASE 506AN  
D
T = 85°C  
A
Steady  
State  
JG  
M
G
= Specific Device Code  
= Date Code  
Power Dissipation  
(Note 2)  
P
W
D
T = 25°C  
A
= Pb−Free Package  
Pulsed Drain Current  
t = 10 ms  
p
I
−17  
A
(Note: Microdot may be in either location)  
DM  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
PIN CONNECTIONS  
K
T
STG  
Source Current (Body Diode)  
I
S
−1.9  
TBD  
A
A
N/C  
D
K
G
S
Single Pulse Drain−to−Source AvalancheEnergy  
E
AS  
mJ  
1
2
3
6
5
4
(VDD = V, VG = V, IPK = A, RG = W)  
Lead Temperature for Soldering Purposes  
T
L
260  
°C  
(1/8″ from case for 10 s)  
D
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface Mounted on FR4 Board using 2 in sq pad size  
(Top View)  
(Cu area = 1.127 in sq [2 oz] including traces).  
2. Surface Mounted on FR4 Board using the minimum recommended pad size.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. P0  
NTLJF1103P/D  
 
1234

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