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NTLJD3183CZ

更新时间： 2024-11-01 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 136K
描述
Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, μCool™ Complementary, 2x2 mm, WDFN Package

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NTLJD3183CZ 数据手册

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NTLJD3183CZ  
Power MOSFET  
20 V/−20 V, 4.7 A/−4.0 A, mCoolt  
Complementary, 2x2 mm, WDFN Package  
Features  
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent  
http://onsemi.com  
Thermal Conduction  
• Lowest R  
in 2x2 mm Package  
DS(on)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• Footprint Same as SC−88 Package  
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments  
• ESD Protected  
68 mW @ 4.5 V  
86 mW @ 2.5 V  
4.7 A  
4.2 A  
N−Channel  
20 V  
120 mW @ 1.8 V  
100 mW @ −4.5 V  
144 mW @ −2.5 V  
200 mW @ −1.8 V  
3.5 A  
−4.0 A  
−3.3 A  
−2.8 A  
• This is a Pb−Free Device  
Applications  
P−Channel  
−20 V  
• Optimized for Battery and Load Management Applications in  
Portable Equipment  
• Load Switch  
• Level Shift Circuits  
MARKING  
DIAGRAM  
D2  
D1  
• DC−DC Converters  
1
2
3
6
5
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
WDFN6  
CASE 506AN  
JNMG  
G
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
20  
Unit  
V
Pin 1  
V
DSS  
Gate−to−Source Voltage  
V
GS  
8.0  
V
JN = Specific Device Code  
M
G
= Date Code  
= Pb−Free Package  
T = 25°C  
3.8  
2.7  
4.7  
N−Channel  
Continuous Drain  
Current (Note 1)  
I
D
A
Steady  
State  
A
T = 85°C  
A
(Note: Microdot may be in either location)  
t ≤ 5 s  
T = 25°C  
A
T = 25°C  
−3.2  
−2.3  
−4.0  
1.5  
P−Channel  
Continuous Drain  
Current (Note 1)  
I
A
Steady  
State  
A
D
PIN CONNECTIONS  
D1  
T = 85°C  
A
t ≤ 5 s  
Steady  
State  
T = 25°C  
A
Power Dissipation  
(Note 1)  
P
I
W
D
S1  
G1  
D2  
D1  
G2  
S2  
1
2
3
6
5
4
T = 25°C  
A
t ≤ 5 s  
2.3  
2.6  
T = 25°C  
A
N−Channel  
Continuous Drain  
Current (Note 2)  
P−Channel  
Continuous Drain  
Current (Note 2)  
A
A
D
Steady  
State  
D2  
T = 85°C  
A
1.9  
T = 25°C  
A
−2.2  
−1.6  
0.71  
I
D
Steady  
State  
T = 85°C  
A
(Top View)  
Power Dissipation  
(Note 2)  
Steady  
State  
P
W
A
D
T = 25°C  
A
ORDERING INFORMATION  
N−Ch  
P−Ch  
18  
−16  
−55 to  
150  
Pulsed Drain Current  
t = 10 ms  
p
I
DM  
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature T , T  
°C  
°C  
J
STG  
NTLJD3183CZTAG  
WDFN6 3000/Tape & Reel  
(Pb−Free)  
Lead Temperature for Soldering Purposes  
T
260  
L
(1/8″ from case for 10 s)  
NTLJD3183CZTBG  
WDFN6 3000/Tape & Reel  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Surface Mounted on FR4 Board using the minimum recommended pad size  
2
of 30 mm , 2 oz Cu.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
December, 2008 − Rev. 0  
NTLJD3183CZ/D  
 
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