5秒后页面跳转
NTLJD3181PZTAG PDF预览

NTLJD3181PZTAG

更新时间: 2024-11-01 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 122K
描述
Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package

NTLJD3181PZTAG 数据手册

 浏览型号NTLJD3181PZTAG的Datasheet PDF文件第2页浏览型号NTLJD3181PZTAG的Datasheet PDF文件第3页浏览型号NTLJD3181PZTAG的Datasheet PDF文件第4页浏览型号NTLJD3181PZTAG的Datasheet PDF文件第5页浏览型号NTLJD3181PZTAG的Datasheet PDF文件第6页浏览型号NTLJD3181PZTAG的Datasheet PDF文件第7页 
NTLJD3181PZ  
Power MOSFET  
20 V, 4.0 A, mCoolt Dual PChannel,  
ESD, 2x2 mm WDFN Package  
Features  
WDFN 2x2 mm Package with Exposed Drain Pads for Excellent  
http://onsemi.com  
Thermal Conduction  
Lowest R  
Solution in 2x2 mm Package  
V
R
MAX  
I
D
MAX (Note 1)  
4.0 A  
DS(on)  
(BR)DSS  
DS(on)  
Footprint Same as SC88 Package  
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments  
ESD Protected  
100 mW @ 4.5 V  
144 mW @ 2.5 V  
200 mW @ 1.8 V  
20 V  
This is a PbFree Device  
D1  
D2  
Applications  
Optimized for Battery and Load Management Applications in  
Portable Equipment  
LiIon Battery Charging and Protection Circuits  
High Side Load Switch  
G1  
G2  
S1  
S2  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
PCHANNEL MOSFET  
PCHANNEL MOSFET  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
20  
8.0  
Unit  
V
V
DSS  
MARKING  
DIAGRAM  
D2  
D1  
GatetoSource Voltage  
V
GS  
V
Continuous Drain  
Current (Note 1)  
I
A
T = 25°C  
3.2  
2.3  
4.0  
1.5  
1
2
3
6
5
4
D
A
WDFN6  
CASE 506AN  
Steady  
State  
JEMG  
T = 85°C  
A
G
Pin 1  
t 5 s  
T = 25°C  
A
JE = Specific Device Code  
Power Dissipation  
(Note 1)  
P
W
Steady  
State  
M
G
= Date Code  
= PbFree Package  
D
T = 25°C  
A
(Note: Microdot may be in either location)  
t 5 s  
2.3  
Continuous Drain  
Current (Note 2)  
I
A
T = 25°C  
2.2  
1.6  
0.71  
D
A
PIN CONNECTIONS  
T = 85°C  
A
Steady  
State  
D1  
Power Dissipation  
(Note 2)  
P
W
D
T = 25°C  
A
S1  
G1  
D2  
D1  
1
2
3
6
5
4
Pulsed Drain Current  
t = 10 ms  
I
16  
A
p
DM  
G2  
S2  
Operating Junction and Storage Temperature T , T  
55 to  
150  
°C  
J
STG  
D2  
Source Current (Body Diode) (Note 2)  
I
1.0  
A
S
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
L
(Top View)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
NTLJD3181PZTAG  
WDFN6 3000/Tape & Reel  
(PbFree)  
2. Surface Mounted on FR4 Board using the minimum recommended pad size  
2
NTLJD3181PZTBG  
WDFN6 3000/Tape & Reel  
(PbFree)  
of 30 mm , 2 oz Cu.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
December, 2008 Rev. 0  
NTLJD3181PZ/D  
 

与NTLJD3181PZTAG相关器件

型号 品牌 获取价格 描述 数据表
NTLJD3181PZTBG ONSEMI

获取价格

Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3182FZ ONSEMI

获取价格

Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTAG ONSEMI

获取价格

Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTBG ONSEMI

获取价格

Power MOSFET and Schottky Diode −20 V,
NTLJD3183CZ ONSEMI

获取价格

Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD3183CZTAG ONSEMI

获取价格

Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD3183CZTBG ONSEMI

获取价格

Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD4114N ONSEMI

获取价格

High Efficiency DC-DC Converters
NTLJD4116N ONSEMI

获取价格

Power MOSFET
NTLJD4116NT1G ONSEMI

获取价格

Power MOSFET