NTLJD3181PZTAG

更新时间： 2024-11-12 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	122K
描述
Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Package

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NTLJD3181PZTAG 数据手册

NTLJD3181PZ

Power MOSFET

−20 V, −4.0 A, mCoolt Dual P−Channel,

ESD, 2x2 mm WDFN Package

Features

• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent

http://onsemi.com

Thermal Conduction

• Lowest R

Solution in 2x2 mm Package

MAX

MAX (Note 1)

−4.0 A

DS(on)

(BR)DSS

DS(on)

• Footprint Same as SC−88 Package

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• ESD Protected

100 mW @ −4.5 V

144 mW @ −2.5 V

200 mW @ −1.8 V

−20 V

• This is a Pb−Free Device

Applications

• Optimized for Battery and Load Management Applications in

Portable Equipment

• Li−Ion Battery Charging and Protection Circuits

• High Side Load Switch

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

P−CHANNEL MOSFET

Parameter

Drain−to−Source Voltage

Symbol

Value

−20

8.0

Unit

DSS

MARKING

DIAGRAM

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

T = 25°C

−3.2

−2.3

−4.0

1.5

WDFN6

CASE 506AN

Steady

State

JEMG

T = 85°C

Pin 1

t ≤ 5 s

T = 25°C

JE = Specific Device Code

Power Dissipation

(Note 1)

Steady

State

= Date Code

= Pb−Free Package

T = 25°C

(Note: Microdot may be in either location)

t ≤ 5 s

2.3

Continuous Drain

Current (Note 2)

T = 25°C

−2.2

−1.6

0.71

PIN CONNECTIONS

T = 85°C

Steady

State

Power Dissipation

(Note 2)

T = 25°C

Pulsed Drain Current

t = 10 ms

−16

Operating Junction and Storage Temperature T , T

−55 to

150

°C

STG

Source Current (Body Diode) (Note 2)

−1.0

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

(Top View)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

NTLJD3181PZTAG

WDFN6 3000/Tape & Reel

(Pb−Free)

2. Surface Mounted on FR4 Board using the minimum recommended pad size

NTLJD3181PZTBG

WDFN6 3000/Tape & Reel

(Pb−Free)

of 30 mm , 2 oz Cu.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

December, 2008 − Rev. 0

NTLJD3181PZ/D

12 3 4 5 6 7

中文翻译

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与NTLJD3181PZTAG相关器件

型号	品牌	获取价格	描述	数据表
NTLJD3181PZTBG	ONSEMI	获取价格	Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3182FZ	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTAG	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTBG	ONSEMI	获取价格	Power MOSFET and Schottky Diode −20 V,
NTLJD3183CZ	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD3183CZTAG	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD3183CZTBG	ONSEMI	获取价格	Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD4114N	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTLJD4116N	ONSEMI	获取价格	Power MOSFET
NTLJD4116NT1G	ONSEMI	获取价格	Power MOSFET

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