5秒后页面跳转
NTLJD3119CTBG PDF预览

NTLJD3119CTBG

更新时间: 2024-12-01 03:14:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 174K
描述
Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Package

NTLJD3119CTBG 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DFN包装说明:SMALL OUTLINE, S-PDSO-N6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:7 weeks
风险等级:0.93配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):3.8 A
最大漏极电流 (ID):2.6 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-N6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):2.3 W
最大脉冲漏极电流 (IDM):18 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

NTLJD3119CTBG 数据手册

 浏览型号NTLJD3119CTBG的Datasheet PDF文件第2页浏览型号NTLJD3119CTBG的Datasheet PDF文件第3页浏览型号NTLJD3119CTBG的Datasheet PDF文件第4页浏览型号NTLJD3119CTBG的Datasheet PDF文件第5页浏览型号NTLJD3119CTBG的Datasheet PDF文件第6页浏览型号NTLJD3119CTBG的Datasheet PDF文件第7页 
NTLJD3119C  
Power MOSFET  
20 V/20 V, 4.6 A/4.1 A, mCoolt  
Complementary, 2x2 mm, WDFN Package  
Features  
Complementary NChannel and PChannel MOSFET  
WDFN Package with Exposed Drain Pad for Excellent Thermal  
http://onsemi.com  
Conduction  
Footprint Same as SC88 Package  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Leading Edge Trench Technology for Low On Resistance  
1.8 V Gate Threshold Voltage  
65 mW @ 4.5 V  
75 mW @ 2.5 V  
3.8 A  
2.0 A  
NChannel  
20 V  
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments  
120 mW @ 1.8 V  
100 mW @ 4.5 V  
135 mW @ 2.5 V  
200 mW @ 1.8 V  
1.7 A  
4.1 A  
2.0 A  
1.6 A  
This is a PbFree Device  
Applications  
PChannel  
20 V  
Synchronous DCDC Conversion Circuits  
Load/Power Management of Portable Devices like PDA’s, Cellular  
Phones and Hard Drives  
Color Display and Camera Flash Regulators  
MARKING  
DIAGRAM  
D2  
D1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
20  
20  
8.0  
Unit  
1
2
3
6
5
4
WDFN6  
CASE 506AN  
JMMG  
NCh  
PCh  
NCh  
PCh  
V
DSS  
V
G
Pin 1  
GatetoSource Voltage  
V
GS  
V
A
JD = Specific Device Code  
M
G
= Date Code  
= PbFree Package  
T = 25°C  
3.8  
2.8  
4.6  
NChannel  
Continuous Drain  
Current (Note 1)  
I
D
Steady  
State  
A
(Note: Microdot may be in either location)  
T = 85°C  
A
t 5 s  
T = 25°C  
A
PIN CONNECTIONS  
D1  
T = 25°C  
3.3  
2.4  
4.1  
1.5  
PChannel  
Continuous Drain  
Current (Note 1)  
I
A
Steady  
State  
A
D
T = 85°C  
A
t 5 s  
Steady  
State  
T = 25°C  
A
S1  
G1  
D2  
D1  
G2  
S2  
1
2
3
6
5
4
Power Dissipation  
(Note 1)  
P
I
W
D
T = 25°C  
A
t 5 s  
2.3  
2.6  
T = 25°C  
A
NChannel  
Continuous Drain  
Current (Note 2)  
PChannel  
Continuous Drain  
Current (Note 2)  
A
A
D
Steady  
State  
D2  
T = 85°C  
A
1.9  
T = 25°C  
A
2.3  
1.6  
0.71  
I
D
Steady  
State  
T = 85°C  
A
(Top View)  
Power Dissipation  
(Note 2)  
Steady  
State  
P
W
A
D
T = 25°C  
A
ORDERING INFORMATION  
NCh  
PCh  
18  
20  
55 to  
150  
Pulsed Drain Current  
t = 10 ms  
p
I
DM  
Device  
Package  
Shipping  
NTLJD3119CTAG  
WDFN6  
3000/Tape & Reel  
Operating Junction and Storage Temperature T , T  
°C  
°C  
J
STG  
(PbFree)  
Lead Temperature for Soldering Purposes  
T
260  
L
NTLJD3119CTBG  
WDFN6  
3000/Tape & Reel  
(1/8from case for 10 s)  
(PbFree)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces).  
2. Surface Mounted on FR4 Board using the minimum recommended pad size  
2
of 30 mm , 2 oz Cu.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 Rev. 0  
NTLJD3119C/D  

NTLJD3119CTBG 替代型号

型号 品牌 替代类型 描述 数据表
NTLJD3119CTAG ONSEMI

类似代替

Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, uCool Complementary, 2x2 mm, WDFN Packa

与NTLJD3119CTBG相关器件

型号 品牌 获取价格 描述 数据表
NTLJD3181PZ ONSEMI

获取价格

Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3181PZTAG ONSEMI

获取价格

Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3181PZTBG ONSEMI

获取价格

Power MOSFET −20 V, −4.0 A, Cool Dual P−Channel, ESD, 2x2 mm WDFN Pack
NTLJD3182FZ ONSEMI

获取价格

Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTAG ONSEMI

获取价格

Power MOSFET and Schottky Diode −20 V,
NTLJD3182FZTBG ONSEMI

获取价格

Power MOSFET and Schottky Diode −20 V,
NTLJD3183CZ ONSEMI

获取价格

Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD3183CZTAG ONSEMI

获取价格

Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD3183CZTBG ONSEMI

获取价格

Power MOSFET 20 V/−20 V, 4.7 A/−4
NTLJD4114N ONSEMI

获取价格

High Efficiency DC-DC Converters