NTF3055-160
Preferred Device
Power MOSFET
2.0 Amps, 60 Volts
N–Channel SOT–223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
2.0 AMPERES
60 VOLTS
Applications
• Power Supplies
• Converters
R
= 160 mW
DS(on)
• Power Motor Controls
• Bridge Circuits
N–Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol Value
Unit
Vdc
Vdc
G
Drain–to–Source Voltage
V
DSS
60
60
Drain–to–Gate Voltage (R
= 1.0 MΩ)
V
DGR
GS
S
Gate–to–Source Voltage
– Continuous
V
GS
± 20
± 30
Vdc
Vpk
– Non–repetitive (t ≤ 10 ms)
p
MARKING
DIAGRAM
Drain Current
– Continuous @ T = 25°C
I
I
2.0
1.2
6.0
Adc
Apk
A
D
D
– Continuous @ T = 100°C
A
4
I
– Single Pulse (t ≤ 10 µs)
DM
p
SOT–223
CASE 318E
STYLE 3
5160
LWW
Total Power Dissipation @ T = 25°C (Note 1.)
P
2.1
1.3
W
W
A
D
1
Total Power Dissipation @ T = 25°C (Note 2.)
A
2
3
Derate above 25°C
0.014 W/°C
Operating and Storage Temperature Range
T , T
stg
–55 to
175
°C
J
5160
L
WW
= Device Code
= Location Code
= Work Week
Single Pulse Drain–to–Source Avalanche
E
AS
65
mJ
Energy – Starting T = 25°C
J
GS
(V
= 25 Vdc, V
= 10 Vdc,
DD
PIN ASSIGNMENT
I (pk) = 6.0 Apk, L = 10 mH, V
L
= 60 Vdc)
DS
4
Drain
Thermal Resistance
°C/W
°C
– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)
R
R
72.3
114
θJA
θJA
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
1. When surface mounted to an FR4 board using 1″ pad size,
2
1
2
3
Gate Drain Source
(Cu. Area 1.127 in ).
2. When surface mounted to an FR4 board using minimum recommended pad
2
size, 2–2.4 oz. (Cu. Area 0.272 in ).
ORDERING INFORMATION
Device
Package
Shipping
NTF3055–160T1
NTF3055–160T3
SOT–223 1000 Tape & Reel
SOT–223 4000 Tape & Reel
NTF3055–160T3LF SOT–223 4000 Tape & Reel
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
July, 2001 – Rev. 0
NTF3055–160/D