Datasheet > NTF6P02T3/D

NTF6P02T3/D

更新时间： 2024-11-25 23:55:07

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描述
NTF6P02T3

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数据手册

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NTF6P02T3/D 数据手册

NTF6P02T3

Power MOSFET

-6.0 Amps, -20 Volts

P–Channel SOT–223

Features

http://onsemi.com

• Low R

DS(on)

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

–6.0 AMPERES

–20 VOLTS

R_DS(on)= 44 mW (Typ.)

Typical Applications

P–Channel

• Power Management in Portables and Battery–Powered Products, i.e.:

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Gate–to–Source Voltage

Drain Current (Note 1)

Symbol Value

Unit

Vdc

DSS

–20

±8.0

– Continuous @ T = 25°C

–10

–8.4

–35

Adc

MARKING

DIAGRAM

– Continuous @ T = 70°C

Apk

– Single Pulse (t = 10 µs)

Total Power Dissipation @ T = 25°C

8.3

Operating and Storage Temperature Range

T , T

–55 to

+150

°C

SOT–223

CASE 318E

STYLE 3

stg

AWW

6P02

Single Pulse Drain–to–Source Avalanche

150

°C/W

°C

Energy – Starting T = 25°C

(V = –20 Vdc, V = –5.0 Vdc,

= –10 A, L = 3.0 mH, R = 25W)

6P02

= Assembly Location

= Work Week

= Device Code

L(pk)

Thermal Resistance

– Junction to Lead (Note 1)

– Junction to Ambient (Note 2)

– Junction to Ambient (Note 3)

71.4

160

PIN ASSIGNMENT

Maximum Lead Temperature for Soldering

260

4 Drain

Purposes, 1/8″ from case for 10 seconds

1. Steady State.

2. When surface mounted to an FR4 board using 1″ pad size,

(Cu. Area 1.127 in ), Steady State.

3. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu. Area 0.412 in ), Steady State.

Gate Drain Source

ORDERING INFORMATION

Device

NTF6P02T3

Package

Shipping

SOT–223 4000/Tape & Reel

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

September, 2002 – Rev. 0

NTF6P02T3/D

12 3 4 5 6 7 8

中文翻译

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