NTF3055L175
Preferred Device
Power MOSFET
2.0 A, 60 V, Logic Level
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
2.0 A, 60 V
Features
R
DS(on) = 175 mW
• Pb−Free Packages are Available
Applications
N−Channel
• Power Supplies
• Converters
D
• Power Motor Controls
• Bridge Circuits
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
S
Rating
Symbol Value
Unit
Vdc
Vdc
Drain−to−Source Voltage
V
DSS
60
60
Drain−to−Gate Voltage (R = 1.0 MW)
V
DGR
GS
4
SOT−223
CASE 318E
STYLE 3
Gate−to−Source Voltage
− Continuous
V
GS
± 15
± 20
Vdc
Vpk
1
2
− Non−repetitive (t ≤ 10 ms)
p
3
Drain Current
− Continuous @ T = 25°C
I
I
2.0
1.2
6.0
Adc
Apk
A
D
D
− Continuous @ T = 100°C
A
MARKING DIAGRAM
I
− Single Pulse (t ≤ 10 ms)
DM
p
Total Power Dissipation @ T = 25°C (Note 1)
P
2.1
1.3
W
W
A
D
5L175 = Device Code
Total Power Dissipation @ T = 25°C (Note 2)
A
5L175
LWW
L
= Location Code
= Work Week
Derate above 25°C
0.014 W/°C
WW
Operating and Storage Temperature Range
T , T
J
−55
°C
stg
to 175
Single Pulse Drain−to−Source Avalanche
E
AS
65
mJ
Energy − Starting T = 25°C
J
PIN ASSIGNMENT
(V = 25 Vdc, V = 5.0 Vdc,
DD
GS
4
I
= 3.6 A, L = 10 mH, V = 60 Vdc)
Drain
L(pk)
DS
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
°C/W
°C
R
R
72.3
114
q
JA
JA
q
Maximum Lead Temperature for Soldering
T
260
L
Purposes, 1/8″ from case for 10 seconds
1
2
3
Gate Drain Source
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area
2
0.995 in ).
2. When surface mounted to an FR4 board using minimum recommended pad
2
size, 2−2.4 oz. (Cu. Area 0.272 in ).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
February, 2004 − Rev. 2
NTF3055L175/D