Datasheet > NTF6P02T3-D_10

NTF6P02T3-D_10

更新时间： 2022-12-19 12:30:05

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	134K
描述
Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTF6P02T3-D_10 数据手册

NTF6P02T3

Power MOSFET

-10 Amps, -20 Volts

P−Channel SOT−223

http://onsemi.com

Features

• Low R

DS(on)

−10 AMPERES

−20 VOLTS

R_DS(on)= 44 mW (Typ.)

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• Pb−Free Package is Available

Typical Applications

• Power Management in Portables and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (Note 1)

Symbol

Value

−20

Unit

Vdc

P−Channel MOSFET

DSS

MARKING DIAGRAM

& PIN ASSIGNMENT

8.0

Drain

− Continuous @ T = 25°C

−10

−8.4

−35

Adc

− Continuous @ T = 70°C

− Single Pulse (t = 10 ms)

Apk

AYW

6P02G

Total Power Dissipation @ T = 25°C

8.3

SOT−223

CASE 318E

STYLE 3

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Single Pulse Drain−to−Source Avalanche

150

°C/W

°C

Energy − Starting T = 25°C

Gate Drain Source

(V = −20 Vdc, V = −5.0 Vdc,

L(pk)

= −10 A, L = 3.0 mH, R = 25W)

6P02

= Assembly Location

= Year

Thermal Resistance

= Work Week

= Specific Device Code

= Pb−Free Package

− Junction to Lead (Note 1)

− Junction to Ambient (Note 2)

− Junction to Ambient (Note 3)

71.4

160

(Note: Microdot may be in either location)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Steady State.

2. When surface mounted to an FR4 board using 1” pad size,

(Cu. Area 1.127 sq in), Steady State.

ORDERING INFORMATION

†

Device

Package

Shipping

NTF6P02T3

SOT−223 4000/Tape & Reel

4000/Tape & Reel

SOT−223

(Pb−Free)

NTF6P02T3G

3. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu. Area 0.412 sq in), Steady State.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

January, 2010 − Rev. 3

NTF6P02T3/D

12 3 4 5 6

下载PDF

与NTF6P02T3-D_10相关器件

型号	品牌	描述	获取价格	数据表
NTF6P02T3G	ONSEMI	Power MOSFET -6.0 Amps, -20 Volts	获取价格
NTFS0505MC	MURATA	Isolated 1W Wide Input DC/DC Converters	获取价格
NTFS0505MC-R	MURATA	DC-DC Regulated Power Supply Module	获取价格
NTFS0512MC	MURATA	Isolated 1W Wide Input DC/DC Converters	获取价格
NTFS0512MC-R	MURATA	DC-DC Regulated Power Supply Module	获取价格
NTFS0515MC	MURATA	Isolated 1W Wide Input DC/DC Converters	获取价格