Datasheet > NTF6P02

NTF6P02

更新时间： 2024-11-02 12:04:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	112K
描述
Power MOSFET -10 Amps, -20 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTF6P02 数据手册

NTF6P02, NVF6P02

Power MOSFET

-10 Amps, -20 Volts

P−Channel SOT−223

http://onsemi.com

Features

• Low R

DS(on)

−10 AMPERES

−20 VOLTS

R_DS(on)= 44 mW (Typ.)

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• NVF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Power Management in Portables and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

P−Channel MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

& PIN ASSIGNMENT

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (Note 1)

Symbol

Value

−20

Unit

Vdc

DSS

Drain

8.0

AYW

6P02G

− Continuous @ T = 25°C

−10

−8.4

−35

Adc

SOT−223

CASE 318E

STYLE 3

− Continuous @ T = 70°C

− Single Pulse (t = 10 ms)

Apk

Total Power Dissipation @ T = 25°C

8.3

Operating and Storage Temperature Range T , T

−55 to

+150

°C

stg

Gate Drain Source

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb−Free Package

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

150

°C/W

°C

(V = −20 Vdc, V = −5.0 Vdc,

L(pk)

6P02

= −10 A, L = 3.0 mH, R = 25W)

Thermal Resistance

(Note: Microdot may be in either location)

− Junction to Lead (Note 1)

− Junction to Ambient (Note 2)

− Junction to Ambient (Note 3)

71.4

160

ORDERING INFORMATION

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Steady State.

2. When surface mounted to an FR4 board using 1” pad size,

(Cu. Area 1.127 sq in), Steady State.

4000 / Tape &

Reel

SOT−223

(Pb−Free)

NTF6P02T3G

4000 / Tape &

Reel

SOT−223

(Pb−Free)

NVF6P02T3G*

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu. Area 0.412 sq in), Steady State.

Semiconductor Components Industries, LLC, 2013

Publication Order Number:

August, 2013 − Rev. 6

NTF6P02T3/D

12 3 4 5 6

中文翻译

下载PDF

与NTF6P02相关器件

型号	品牌	获取价格	描述	数据表
NTF6P02T3	ONSEMI	获取价格	Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
NTF6P02T3/D	ETC	获取价格	NTF6P02T3
NTF6P02T3_06	ONSEMI	获取价格	Power MOSFET -6.0 Amps, -20 Volts
NTF6P02T3-D	ONSEMI	获取价格	Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223
NTF6P02T3-D_10	ONSEMI	获取价格	Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223
NTF6P02T3G	ONSEMI	获取价格	Power MOSFET -6.0 Amps, -20 Volts
NTFS0505MC	MURATA	获取价格	Isolated 1W Wide Input DC/DC Converters
NTFS0505MC-R	MURATA	获取价格	DC-DC Regulated Power Supply Module
NTFS0512MC	MURATA	获取价格	Isolated 1W Wide Input DC/DC Converters
NTFS0512MC-R	MURATA	获取价格	DC-DC Regulated Power Supply Module

与NTF6P02相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

NTF6P02

NTF6P02 数据手册

与NTF6P02相关器件

与NTF6P02相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTF6P02

NTF6P02 数据手册

与NTF6P02相关器件

与NTF6P02相关文章

您还可以找

您在本页遇到什么问题？