Datasheet > NTF6P02T3_06

NTF6P02T3_06

更新时间： 2024-02-03 15:45:29

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	142K
描述
Power MOSFET -6.0 Amps, -20 Volts

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中文翻译

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数据手册

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NTF6P02T3_06 数据手册

NTF6P02T3

Power MOSFET

−6.0 Amps, −20 Volts

P−Channel SOT−223

http://onsemi.com

Features

• Low R

DS(on)

−6.0 AMPERES

−20 VOLTS

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• Pb−Free Package is Available

R_DS(on)= 44 mꢀ ꢁ ꢂꢃꢄꢅ ꢆ

P−Channel

Typical Applications

• Power Management in Portables and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Symbol Value

Unit

Vdc

DSS

−20

MARKING

DIAGRAM

& PIN

Gate−to−Source Voltage

8.0

Drain Current (Note 1)

− Continuous @ T = 25°C

−10

−8.4

−35

Adc

ASSIGNMENT

− Continuous @ T = 70°C

Drain

− Single Pulse (t = 10 ms)

Apk

SOT−223

CASE 318E

STYLE 3

Total Power Dissipation @ T = 25°C

8.3

AWW

Operating and Storage Temperature Range

T , T

−55

+150

°C

stg

6P02 G

Single Pulse Drain−to−Source Avalanche

150

°C/W

°C

Gate Drain Source

Energy − Starting T = 25°C

(V = −20 Vdc, V = −5.0 Vdc,

L(pk)

= Assembly Location

= Work Week

= Specific Device Code

= Pb−Free Package

= −10 A, L = 3.0 mH, R = 25W)

6P02

Thermal Resistance

− Junction to Lead (Note 1)

− Junction to Ambient (Note 2)

− Junction to Ambient (Note 3)

71.4

160

(Note: Microdot may be in either location)

ORDERING INFORMATION

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Steady State.

NTF6P02T3

SOT−223 4000/Tape & Reel

4000/Tape & Reel

SOT−223

(Pb−Free)

NTF6P02T3G

2. When surface mounted to an FR4 board using 1” pad size,

(Cu. Area 1.127 sq in), Steady State.

3. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu. Area 0.412 sq in), Steady State.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

March, 2006 − Rev. 1

NTF6P02T3/D

12 3 4 5 6

中文翻译

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与NTF6P02T3_06相关器件

型号	品牌	获取价格	描述	数据表
NTF6P02T3-D	ONSEMI	获取价格	Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223
NTF6P02T3-D_10	ONSEMI	获取价格	Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223
NTF6P02T3G	ONSEMI	获取价格	Power MOSFET -6.0 Amps, -20 Volts
NTFS0505MC	MURATA	获取价格	Isolated 1W Wide Input DC/DC Converters
NTFS0505MC-R	MURATA	获取价格	DC-DC Regulated Power Supply Module
NTFS0512MC	MURATA	获取价格	Isolated 1W Wide Input DC/DC Converters
NTFS0512MC-R	MURATA	获取价格	DC-DC Regulated Power Supply Module
NTFS0515MC	MURATA	获取价格	Isolated 1W Wide Input DC/DC Converters
NTFS0515MC-R	MURATA	获取价格	DC-DC Regulated Power Supply Module
NTFS1205MC	MURATA	获取价格	Isolated 1W Wide Input DC/DC Converters

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