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NTF3055L175T3LFG PDF预览

NTF3055L175T3LFG

更新时间: 2024-11-02 03:29:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
6页 67K
描述
Power MOSFET 2.0 A, 60 V, Logic Level

NTF3055L175T3LFG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-261AA包装说明:LEAD FREE, CASE 318E-04, TO-261, 4 PIN
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
雪崩能效等级(Eas):65 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:0.175 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.1 W
最大脉冲漏极电流 (IDM):6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTF3055L175T3LFG 数据手册

 浏览型号NTF3055L175T3LFG的Datasheet PDF文件第2页浏览型号NTF3055L175T3LFG的Datasheet PDF文件第3页浏览型号NTF3055L175T3LFG的Datasheet PDF文件第4页浏览型号NTF3055L175T3LFG的Datasheet PDF文件第5页浏览型号NTF3055L175T3LFG的Datasheet PDF文件第6页 
NTF3055L175  
Preferred Device  
Power MOSFET  
2.0 A, 60 V, Logic Level  
N−Channel SOT−223  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
2.0 A, 60 V  
Features  
R
DS(on) = 175 mW  
Pb−Free Packages are Available  
Applications  
N−Channel  
Power Supplies  
Converters  
D
Power Motor Controls  
Bridge Circuits  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
S
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
Drain−to−Source Voltage  
V
DSS  
60  
60  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
DGR  
GS  
4
SOT−223  
CASE 318E  
STYLE 3  
Gate−to−Source Voltage  
− Continuous  
V
GS  
± 15  
± 20  
Vdc  
Vpk  
1
2
− Non−repetitive (t 10 ms)  
p
3
Drain Current  
− Continuous @ T = 25°C  
I
I
2.0  
1.2  
6.0  
Adc  
Apk  
A
D
D
− Continuous @ T = 100°C  
A
MARKING DIAGRAM  
I
− Single Pulse (t 10 ms)  
DM  
p
Total Power Dissipation @ T = 25°C (Note 1)  
P
2.1  
1.3  
W
W
A
D
5L175 = Device Code  
Total Power Dissipation @ T = 25°C (Note 2)  
A
5L175  
LWW  
L
= Location Code  
= Work Week  
Derate above 25°C  
0.014 W/°C  
WW  
Operating and Storage Temperature Range  
T , T  
J
55  
°C  
stg  
to 175  
Single Pulse Drain−to−Source Avalanche  
E
AS  
65  
mJ  
Energy − Starting T = 25°C  
J
PIN ASSIGNMENT  
(V = 25 Vdc, V = 5.0 Vdc,  
DD  
GS  
4
I
= 3.6 A, L = 10 mH, V = 60 Vdc)  
Drain  
L(pk)  
DS  
Thermal Resistance  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
°C/W  
°C  
R
R
72.3  
114  
q
JA  
JA  
q
Maximum Lead Temperature for Soldering  
T
260  
L
Purposes, 1/8from case for 10 seconds  
1
2
3
Gate Drain Source  
1. When surface mounted to an FR4 board using 1pad size, 1 oz. (Cu. Area  
2
0.995 in ).  
2. When surface mounted to an FR4 board using minimum recommended pad  
2
size, 2−2.4 oz. (Cu. Area 0.272 in ).  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future  
use and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
February, 2004 − Rev. 2  
NTF3055L175/D  
 

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