Datasheet > NTF3055L108D

NTF3055L108D

更新时间： 2024-11-23 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	78K
描述
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223

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NTF3055L108D 数据手册

NTF3055L108

Preferred Device

Power MOSFET

3.0 A, 60 V, Logic Level, N−Channel

SOT−223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

3.0 A, 60 V

Features

R_DS(on)= 120 mW

• Pb−Free Packages are Available

Applications

N−Channel

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

DSS

SOT−223

Drain−to−Gate Voltage (R = 1.0 MW)

DGR

CASE 318E

STYLE 3

Gate−to−Source Voltage

− Continuous

Vdc

Vpk

− Non−repetitive (t ≤ 10 ms)

MARKING DIAGRAM

Drain Current

− Continuous @ T = 25°C

− Continuous @ T = 100°C

− Single Pulse (t ≤ 10 ms)

Adc

Apk

3.0

1.4

9.0

AYW

3055LG

3055L = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Total Power Dissipation @ T = 25°C (Note 1)

2.1

1.3

Watts

Total Power Dissipation @ T = 25°C (Note 2)

Derate above 25°C

0.014 W/°C

(Note: Microdot may be in either location)

Operating and Storage Temperature Range

T , T

−55

to 175

°C

stg

Single Pulse Drain−to−Source Avalanche

PIN ASSIGNMENT

Energy − Starting T = 25°C

Drain

(V = 25 Vdc, V = 5.0 Vdc,

= 7.0 Apk, L = 3.0 mH, V = 60 Vdc)

L(pk)

Thermal Resistance

−Junction−to−Ambient (Note 1)

°C/W

°C

72.3

114

−Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

260

Gate Drain Source

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 0.0995 in ).

2. When surface mounted to an FR4 board using minimum recommended pad

Preferred devices are recommended choices for future use

and best overall value.

size, 2−2.4 oz. (Cu. Area 0.272 in ).

Publication Order Number:

December, 2005 − Rev. 4

NTF3055L108/D

12 3 4 5 6

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与NTF3055L108D相关器件

型号	品牌	获取价格	描述	数据表
NTF3055L108T1	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T1G	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3G	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3LF	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3LFG	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L175	ONSEMI	获取价格	Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1	ONSEMI	获取价格	Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1G	ONSEMI	获取价格	Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T3	ONSEMI	获取价格	Power MOSFET 2.0 A, 60 V, Logic Level

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