5秒后页面跳转
NTF3055L108T1 PDF预览

NTF3055L108T1

更新时间: 2024-11-23 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 78K
描述
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223

NTF3055L108T1 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:TO-261AA包装说明:CASE 318E-04, TO-261, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.16
雪崩能效等级(Eas):74 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.1 W
最大脉冲漏极电流 (IDM):9 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn80Pb20)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTF3055L108T1 数据手册

 浏览型号NTF3055L108T1的Datasheet PDF文件第2页浏览型号NTF3055L108T1的Datasheet PDF文件第3页浏览型号NTF3055L108T1的Datasheet PDF文件第4页浏览型号NTF3055L108T1的Datasheet PDF文件第5页浏览型号NTF3055L108T1的Datasheet PDF文件第6页 
NTF3055L108  
Preferred Device  
Power MOSFET  
3.0 A, 60 V, Logic Level, N−Channel  
SOT−223  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
3.0 A, 60 V  
Features  
RDS(on) = 120 mW  
Pb−Free Packages are Available  
Applications  
N−Channel  
D
Power Supplies  
Converters  
Power Motor Controls  
Bridge Circuits  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
S
C
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
Drain−to−Source Voltage  
V
DSS  
60  
60  
4
SOT−223  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
DGR  
GS  
CASE 318E  
STYLE 3  
1
Gate−to−Source Voltage  
− Continuous  
2
V
GS  
15  
20  
Vdc  
Vpk  
3
− Non−repetitive (t 10 ms)  
p
MARKING DIAGRAM  
Drain Current  
− Continuous @ T = 25°C  
− Continuous @ T = 100°C  
− Single Pulse (t 10 ms)  
Adc  
Apk  
I
I
3.0  
1.4  
9.0  
A
D
D
A
AYW  
3055LG  
G
I
3055L = Device Code  
DM  
p
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Total Power Dissipation @ T = 25°C (Note 1)  
P
2.1  
1.3  
Watts  
Watts  
A
D
Total Power Dissipation @ T = 25°C (Note 2)  
A
Derate above 25°C  
0.014 W/°C  
(Note: Microdot may be in either location)  
Operating and Storage Temperature Range  
T , T  
J
55  
to 175  
°C  
stg  
Single Pulse Drain−to−Source Avalanche  
E
AS  
74  
mJ  
PIN ASSIGNMENT  
Energy − Starting T = 25°C  
J
4
Drain  
(V = 25 Vdc, V = 5.0 Vdc,  
DD  
GS  
I
= 7.0 Apk, L = 3.0 mH, V = 60 Vdc)  
DS  
L(pk)  
Thermal Resistance  
−Junction−to−Ambient (Note 1)  
°C/W  
°C  
R
R
72.3  
114  
q
JA  
JA  
−Junction−to−Ambient (Note 2)  
q
Maximum Lead Temperature for Soldering  
T
260  
L
1
2
3
Gate Drain Source  
Purposes, 1/8from case for 10 seconds  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
1. When surface mounted to an FR4 board using 1pad size, 1 oz.  
2
(Cu. Area 0.0995 in ).  
2. When surface mounted to an FR4 board using minimum recommended pad  
2
Preferred devices are recommended choices for future use  
and best overall value.  
size, 2−2.4 oz. (Cu. Area 0.272 in ).  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 4  
NTF3055L108/D  
 

NTF3055L108T1 替代型号

型号 品牌 替代类型 描述 数据表
NTF3055L108T3 ONSEMI

类似代替

Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NVF3055L108T1G ONSEMI

功能相似

Power MOSFET 3.0 A, 60 V, Logic Level, N−Ch
NTF3055L108T1G ONSEMI

功能相似

Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223

与NTF3055L108T1相关器件

型号 品牌 获取价格 描述 数据表
NTF3055L108T1G ONSEMI

获取价格

Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3 ONSEMI

获取价格

Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3G ONSEMI

获取价格

Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3LF ONSEMI

获取价格

Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3LFG ONSEMI

获取价格

Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L175 ONSEMI

获取价格

Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1 ONSEMI

获取价格

Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1G ONSEMI

获取价格

Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T3 ONSEMI

获取价格

Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T3G ONSEMI

获取价格

Power MOSFET 2.0 A, 60 V, Logic Level