Datasheet > NTF3055L108/D

NTF3055L108/D

更新时间： 2024-11-25 23:55:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	58K
描述
Power MOSFET 3.0 Amps， 60 Volts， Logic Level

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中文翻译

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NTF3055L108/D 数据手册

NTF3055L108

Preferred Device

Power MOSFET

3.0 Amps, 60 Volts, Logic Level

N–Channel SOT–223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

3.0 AMPERES

60 VOLTS

Applications

• Power Supplies

• Converters

= 108 mW

DS(on)

• Power Motor Controls

• Bridge Circuits

N–Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–to–Source Voltage

– Continuous

± 15

± 20

Vdc

Vpk

– Non–repetitive (t ≤ 10 ms)

MARKING

DIAGRAM

Drain Current

– Continuous @ T = 25°C

Adc

Apk

3.0

1.4

9.0

– Continuous @ T = 100°C

– Single Pulse (t ≤ 10 µs)

SOT–223

CASE 318E

STYLE 3

3055L

LWW

Total Power Dissipation @ T = 25°C (Note 1.)

2.1

1.3

Watts

0.014 W/°C

Total Power Dissipation @ T = 25°C (Note 2.)

Derate above 25°C

Operating and Storage Temperature Range

T , T

stg

–55 to

175

°C

3055L = Device Code

= Location Code

= Work Week

Single Pulse Drain–to–Source Avalanche

Energy – Starting T = 25°C

= 25 Vdc, V

= 5.0 Vdc,

PIN ASSIGNMENT

I (pk) = 7.0 Apk, L = 3.0 mH, V

= 60 Vdc)

Drain

Thermal Resistance

°C/W

°C

–Junction to Ambient (Note 1.)

–Junction to Ambient (Note 2.)

72.3

114

θJA

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area

Gate Drain Source

0.0995 in ).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2–2.4 oz. (Cu. Area 0.272 in ).

ORDERING INFORMATION

Device

Package

Shipping

NTF3055L108T1

NTF3055L108T3

SOT–223 1000 Tape & Reel

SOT–223 4000 Tape & Reel

NTF3055L108T3LF SOT–223 4000 Tape & Reel

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

June, 2001 – Rev. 0

NTF3055L108/D

12 3 4 5 6 7 8

中文翻译

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与NTF3055L108/D相关器件

型号	品牌	获取价格	描述	数据表
NTF3055L108D	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T1	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T1G	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3G	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3LF	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L108T3LFG	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
NTF3055L175	ONSEMI	获取价格	Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1	ONSEMI	获取价格	Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1G	ONSEMI	获取价格	Power MOSFET 2.0 A, 60 V, Logic Level

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