Datasheet > 晶体管 > 小信号双极晶体管> NSVMMBT6517LT1G

NSVMMBT6517LT1G

更新时间： 2024-09-14 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		高压小信号双极晶体管
页数	文件大小	规格书
8页	232K
描述
高压 NPN 双极晶体管

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技术参数
数据手册

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NSVMMBT6517LT1G 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	HALOGEN FREE AND ROHS COMPLIANT, 318-08, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.71	Is Samacsys：	N
Base Number Matches：	1

NSVMMBT6517LT1G 数据手册

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by MMBT6517LT1/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

Unit

Vdc

CEO

350

5.0

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Vdc

CBO

EBO

Vdc

Base Current

250

500

mAdc

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBT6517LT1 = 1Z

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage

(I = 1.0 mAdc)

Vdc

(BR)CEO

350

6.0

—

Collector–Base Breakdown Voltage

(I = 100 Adc)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 10 Adc)

Vdc

(BR)EBO

Collector Cutoff Current

nAdc

CBO

= 250 Vdc)

Emitter Cutoff Current

(V = 5.0 Vdc)

EBO

—

1. FR–5 = 1.0

0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7 8

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