MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol 5550 5551
Unit
Vdc
1
BASE
V
CEO
V
CBO
V
EBO
140
160
160
180
Vdc
2
6.0
Vdc
EMITTER
Collector Current − Continuous
I
C
600
mAdc
MARKING
DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
xxxM
SOT−23 (TO−236)
CASE 318
THERMAL CHARACTERISTICS
STYLE 6
Characteristic
Symbol
Max
Unit
xxx = MMBT550LT1 = M1F,
Total Device Dissipation
FR−5 Board (Note 1)
P
D
225
mW
MMBT5551LT1, LT3, LT1G = G1
T = 25°C
Derate Above 25°C
M
= Month Code
A
1.8
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
ORDERING INFORMATION
†
Device
Shipping
Package
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2)
MMBT5550LT1
MMBT5550LT1G
3000 Tape & Reel
3000 Tape & Reel
SOT−23
T = 25°C
A
Derate Above 25°C
2.4
mW/°C
°C/W
SOT−23
(Pb−Free)
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
MMBT5551LT1
3000 Tape & Reel
3000 Tape & Reel
SOT−23
MMBT5551LT1G
SOT−23
(Pb−Free)
Junction and Storage Temperature
T , T
J
−55 to +150
°C
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
MMBT5551LT3
10,000 Tape & Reel
10,000 Tape & Reel
SOT−23
MMBT5551LT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
December, 2004 − Rev. 4
MMBT5550LT1/D