是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | DPAK-3/2 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.76 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NJVMJD210T4G | ONSEMI |
获取价格 |
5.0 A, 25 V PNP Bipolar Power Transistor | |
NJVMJD243T4G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistors | |
NJVMJD253T4G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistors | |
NJVMJD253T4G-VF01 | ONSEMI |
获取价格 |
4.0 A, 100 V PNP Bipolar Power Transistor, 2500-REEL | |
NJVMJD2955T4G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD3055T4G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD31CG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD31CRLG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD31CT4G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD31CT4G-VF01 | ONSEMI |
获取价格 |
3.0 A, 100 V NPN Bipolar Power Transistor, 2500-REEL |