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NJVMJD148T4G-VF01 PDF预览

NJVMJD148T4G-VF01

更新时间: 2024-09-18 14:27:03
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
6页 87K
描述
TRANS NPN 45V 4A DPAK-4

NJVMJD148T4G-VF01 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:DPAK-3/2
Reach Compliance Code:not_compliant风险等级:5.76
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

NJVMJD148T4G-VF01 数据手册

 浏览型号NJVMJD148T4G-VF01的Datasheet PDF文件第2页浏览型号NJVMJD148T4G-VF01的Datasheet PDF文件第3页浏览型号NJVMJD148T4G-VF01的Datasheet PDF文件第4页浏览型号NJVMJD148T4G-VF01的Datasheet PDF文件第5页浏览型号NJVMJD148T4G-VF01的Datasheet PDF文件第6页 
MJD148  
NPN Silicon Power  
Transistor  
DPAK for Surface Mount Applications  
Designed for general purpose amplifier and low speed switching  
applications.  
www.onsemi.com  
Features  
POWER TRANSISTOR  
4.0 AMPERES  
45 VOLTS, 20 WATTS  
High Gain  
Low Saturation Voltage  
High Current Gain − Bandwidth Product  
Epoxy Meets UL 94 V−0 @ 0.125 in  
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
COLLECTOR  
2, 4  
1
BASE  
These Devices are Pb−Free and are RoHS Compliant  
3
MAXIMUM RATINGS  
EMITTER  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
Symbol  
Value  
45  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
mAdc  
4
V
CEO  
V
45  
CB  
EB  
1
2
3
V
5.0  
4.0  
7.0  
50  
DPAK  
I
C
CASE 369C  
STYLE 1  
I
CM  
I
B
MARKING DIAGRAM  
Total Power Dissipation  
P
P
D
@ T = 25°C  
20  
0.16  
W
W/°C  
C
Derate above 25°C  
Total Power Dissipation (Note 1)  
AYWW  
J148G  
D
@ T = 25°C  
1.75  
0.014  
W
W/°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
ESD − Human Body Model  
ESD − Machine Model  
HBM  
MM  
3B  
C
V
V
J148 = Device Code  
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MJD148T4G  
DPAK  
2,500/Tape & Reel  
(Pb−Free)  
NJVMJD148T4G  
DPAK  
2,500/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2016 − Rev. 9  
MJD148/D  
 

NJVMJD148T4G-VF01 替代型号

型号 品牌 替代类型 描述 数据表
MJD148T4G ONSEMI

完全替代

NPN Silicon Power Transistor

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