5秒后页面跳转
NJVMJD31CT4G-VF01 PDF预览

NJVMJD31CT4G-VF01

更新时间: 2024-09-13 14:43:59
品牌 Logo 应用领域
安森美 - ONSEMI 放大器PC晶体管
页数 文件大小 规格书
11页 181K
描述
3.0 A, 100 V NPN Bipolar Power Transistor, 2500-REEL

NJVMJD31CT4G-VF01 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:DPAK-3/2
Reach Compliance Code:not_compliantFactory Lead Time:6 weeks
风险等级:1.59Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:609266
Samacsys Pin Count:3Samacsys Part Category:Transistor BJT NPN
Samacsys Package Category:OtherSamacsys Footprint Name:DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F
Samacsys Released Date:2018-06-10 18:52:54Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN参考标准:AEC-Q101
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

NJVMJD31CT4G-VF01 数据手册

 浏览型号NJVMJD31CT4G-VF01的Datasheet PDF文件第2页浏览型号NJVMJD31CT4G-VF01的Datasheet PDF文件第3页浏览型号NJVMJD31CT4G-VF01的Datasheet PDF文件第4页浏览型号NJVMJD31CT4G-VF01的Datasheet PDF文件第5页浏览型号NJVMJD31CT4G-VF01的Datasheet PDF文件第6页浏览型号NJVMJD31CT4G-VF01的Datasheet PDF文件第7页 
MJD31, NJVMJD31T4G,  
MJD31C, NJVMJD31CT4G  
(NPN), MJD32,  
NJVMJD32T4G, MJD32C,  
NJVMJD32CG,  
NJVMJD32CT4G (PNP)  
http://onsemi.com  
Complementary Power  
Transistors  
SILICON  
POWER TRANSISTORS  
3 AMPERES  
DPAK For Surface Mount Applications  
40 AND 100 VOLTS  
15 WATTS  
Designed for general purpose amplifier and low speed switching  
applications.  
COMPLEMENTARY  
Features  
COLLECTOR  
2,4  
COLLECTOR  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
Straight Lead Version in Plastic Sleeves (“1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Electrically Similar to Popular TIP31 and TIP32 Series  
Epoxy Meets UL 94, V0 @ 0.125 in  
2,4  
1
1
BASE  
BASE  
3
3
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
EMITTER  
EMITTER  
4
These Devices are PbFree and are RoHS Compliant  
4
1
2
1
2
3
3
DPAK  
IPAK  
CASE 369C  
STYLE 1  
CASE 369D  
STYLE 1  
MARKING DIAGRAMS  
YWW  
J3xxG  
AYWW  
J3xxG  
DPAK  
IPAK  
A
Y
= Site Code  
= Year  
WW  
xx  
G
= Work Week  
= 1, 1C, 2, or 2C  
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
November, 2013 Rev. 13  
MJD31/D  

NJVMJD31CT4G-VF01 替代型号

型号 品牌 替代类型 描述 数据表
MJD31CTF ONSEMI

类似代替

3.0 A, 100 V NPN Bipolar Power Transistor
NJVMJD31CT4G ONSEMI

类似代替

Complementary Power Transistors
MJD31CT4G ONSEMI

类似代替

Complementary Power Transistors

与NJVMJD31CT4G-VF01相关器件

型号 品牌 获取价格 描述 数据表
NJVMJD31T4G ONSEMI

获取价格

Complementary Power Transistors
NJVMJD32CG ONSEMI

获取价格

Complementary Power Transistors
NJVMJD32CT4G ONSEMI

获取价格

Complementary Power Transistors
NJVMJD32CT4G-VF01 ONSEMI

获取价格

TRANS PNP 100V 3A DPAK
NJVMJD32T4G ONSEMI

获取价格

Complementary Power Transistors
NJVMJD340T4G ONSEMI

获取价格

High Voltage Power Transistors
NJVMJD350T4G ONSEMI

获取价格

High Voltage Power Transistors
NJVMJD41CT4G ONSEMI

获取价格

Complementary Power Transistors
NJVMJD41CT4G-VF01 ONSEMI

获取价格

TRANS NPN 100V 6A DPAK-4
NJVMJD42CRLG ONSEMI

获取价格

Complementary Power Transistors