是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | DPAK-3/2 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.72 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 6 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NJVMJD44E3T4G | ONSEMI |
获取价格 |
10 A,80 V,NPN 达林顿双极功率晶体管 | |
NJVMJD44H11D3T4G | ONSEMI |
获取价格 |
8 A,80 V,NPN 双极功率晶体管 | |
NJVMJD44H11G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD44H11RLG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD44H11RLG-VF01 | ONSEMI |
获取价格 |
8 A, 80 V NPN Bipolar Power Transistor, 1800-REEL | |
NJVMJD44H11T4G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
NJVMJD44H11T4G-VF01 | ONSEMI |
获取价格 |
8 A, 80 V NPN Bipolar Power Transistor, 2500-REEL | |
NJVMJD45H11D3T4G | ONSEMI |
获取价格 |
8 A,80 V,PNP 双极功率晶体管 | |
NJVMJD45H11G | ONSEMI |
获取价格 |
8 A,80 V,PNP 双极功率晶体管 | |
NJVMJD45H11RLG | ONSEMI |
获取价格 |
Complementary Power Transistors |