5秒后页面跳转
捷配首页

Datasheet > NJVMJD45H11T4G-VF01
NJVMJD45H11T4G-VF01 PDF预览

NJVMJD45H11T4G-VF01

更新时间： 2024-11-21 15:46:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
8页 139K
描述
TRANS PNP 80V 8A DPAK-4

阅读下载

中文翻译

获取价格

NJVMJD45H11T4G-VF01 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：DPAK-3/2
Reach Compliance Code：not_compliantFactory Lead Time：4 weeks
风险等级：1.66外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：40
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
参考标准：AEC-Q101表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：90 MHzBase Number Matches：1

NJVMJD45H11T4G-VF01 数据手册

 浏览型号NJVMJD45H11T4G-VF01的Datasheet PDF文件第2页浏览型号NJVMJD45H11T4G-VF01的Datasheet PDF文件第3页浏览型号NJVMJD45H11T4G-VF01的Datasheet PDF文件第4页浏览型号NJVMJD45H11T4G-VF01的Datasheet PDF文件第5页浏览型号NJVMJD45H11T4G-VF01的Datasheet PDF文件第6页浏览型号NJVMJD45H11T4G-VF01的Datasheet PDF文件第7页 
MJD44H11ꢀ(NPN),  
MJD45H11ꢀ(PNP)  
Complementary Power  
Transistors  
DPAK for Surface Mount Applications  
http://onsemi.com  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Lead Formed for Surface Mount Application in Plastic Sleeves  
(No Suffix)  
80 VOLTS, 20 WATTS  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Electrically Similar to Popular D44H/D45H Series  
COMPLEMENTARY  
COLLECTOR  
2, 4  
COLLECTOR  
• Low Collector Emitter Saturation Voltage  
• Fast Switching Speeds  
2, 4  
• Complementary Pairs Simplifies Designs  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
1
1
BASE  
BASE  
• NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
3
3
EMITTER  
EMITTER  
• These Devices are Pb−Free and are RoHS Compliant  
4
MAXIMUM RATINGS (T = 25_C, common for NPN and PNP, minus  
A
4
sign, “−”, for PNP omitted, unless otherwise noted)  
Rating  
Symbol  
Max  
80  
5
Unit  
Vdc  
Vdc  
Adc  
Adc  
1
2
1
2
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
CEO  
3
3
V
EB  
DPAK  
CASE 369C  
STYLE 1  
IPAK  
Collector Current − Continuous  
Collector Current − Peak  
Total Power Dissipation  
@ T = 25°C  
Derate above 25°C  
I
C
8
CASE 369D  
STYLE 1  
I
16  
CM  
P
D
20  
0.16  
W
W/°C  
MARKING DIAGRAMS  
C
Total Power Dissipation (Note 1)  
P
D
1.75  
0.014  
W
W/°C  
@ T = 25°C  
A
AYWW  
J4  
xH11G  
AYWW  
J4  
xH11G  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
ESD − Human Body Model  
ESD − Machine Model  
HBM  
MM  
3B  
C
V
V
DPAK  
IPAK  
A
Y
=
=
=
=
Assembly Location  
Year  
Work Week  
Device Code  
x = 4 or 5  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
WW  
J4xH11  
G
=
Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 16  
MJD44H11/D  
 
12345678

中文翻译

下载PDF

NJVMJD45H11T4G-VF01 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD45H11RLG-VF01 ONSEMI

完全替代

 8 A, 80 V PNP Bipolar Power Transistor, 1800-REEL
MJD45H11RLG ONSEMI

类似代替

 Complementary Power Transistors
MJD45H11T4G ONSEMI

类似代替

 SILICON POWER TRANSISTORS

与NJVMJD45H11T4G-VF01相关器件

型号 品牌 获取价格 描述 数据表
NJVMJD47T4G ONSEMI

获取价格

 		High Voltage Power Transistors
NJVMJD50T4G ONSEMI

获取价格

 		High Voltage Power Transistors
NJVMJD6039T4G ONSEMI

获取价格

 		NPN 达林顿双极功率晶体管
NJVMJK31CTWG ONSEMI

获取价格

 		Power Transistor 100 V, 3 A Dual General Purpose NPN
NJVMJK32CTWG ONSEMI

获取价格

 		Power Transistor 100 V, 3 A Dual General Purpose PNP
NJVMJK44H11TWG ONSEMI

获取价格

 		80 V, 8A, Low VCE(sat) NPN Transistor
NJVMJK45H11TWG ONSEMI

获取价格

 		80 V, 8A, Low VCE(sat) PNP Transistor
NJVNJD1718 ONSEMI

获取价格

 		PNP Silicon DPAK For Surface Mount Applications
NJVNJD1718T4G ONSEMI

获取价格

 		PNP Silicon DPAK For Surface Mount Applications
NJVNJD2873T4G ONSEMI

获取价格

 		NPN Silicon DPAK For Surface Mount Applications

与NJVMJD45H11T4G-VF01相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证